| PART |
Description |
Maker |
| DTD513ZE DTD513ZM |
500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)
|
Rohm
|
| 2SA1735 |
Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -500mA) Small Flat Package
|
TY Semiconductor Co., Ltd
|
| 2SB1115 |
World standard miniature package. Low VCE(sat): VCE(sat)=-0.2V at 1A
|
TY Semiconductor Co., Ltd
|
| NSS30100LT1G |
30V, 2A, Low VCE(sat) PNP Transistor(30V,2A,低VCE(sat)，PNP型晶体管) 1000 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236
30 V, 2 A, Low Vce(sat) PNP Transistor
|
ONSEMI[ON Semiconductor]
|
| CMLT591E |
SMD Small Signal Transistor PNP Low VCE(SAT)
PNP Low VCE(Sat) 1.0 Amp transistor
|
CENTRAL[Central Semiconductor Corp]
|
| NSS35200MR6T1G |
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 浣?CE(sat) PNP?朵?绠?
35 V, 5 A, Low VCE(sat) PNP Transistor(35V, 5A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| NSS20500UW3T2G |
20 V, 7.0 A, Low VCE(sat) PNP Transistor(20V, 7.0A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| NSS40600CF8T1G_07 NSS40600CF8T1G NSS40600CF8T1G07 |
40 V, 7.0 A, Low VCE(sat) PNP Transistor(40V, 7.0A, 低VCE(sat) PNP晶体
|
ONSEMI[ON Semiconductor]
|
| IXGT31N60D1 IXGH31N60D1 |
Ultra-Low VCE(sat) IGBT with Diode(VCES00V，VCE(sat).7V的绝缘栅双极晶体带二极管)) 60 A, 600 V, N-CHANNEL IGBT, TO-247AD
Ultra-Low V IGBT with Diode
|
IXYS, Corp.
IXYS Corporation
|
| IXGH38N60 |
Ultra-Low VCE(sat) IGBT(1.8V超低VCE(sat)的绝缘栅双极晶体 75 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
|
