| PART |
Description |
Maker |
| DS2045L |
3.3V Single-Piece 1Mb Nonvolatile SRAM
|
Maxim
|
| DS2045Y DS2045AB |
Single-Piece 1Mb Nonvolatile SRAM
|
Maxim
|
| 24AA02-I/OT 24LC02B-I/MS 24LC02B-E/P 24LC02B-I/ST |
SERIAL EEPROM|256X8|CMOS|TSSOP|8PIN|PLASTIC
SERIAL EEPROM|256X8|CMOS|TSOP|6PIN|PLASTIC
3.3V Single-Piece 1Mb Nonvolatile SRAM
3.3V Single-Piece 256Kb Nonvolatile SRAM
Single/Dual/Triple/Quad DS3/E3 Single-Chip Transceivers
Single/Dual/Triple/Quad ATM/Packet PHYs for DS3/E3/STS-1 串行EEPROM的| 256X8 |的CMOS |双酯| 8引脚|塑料
Single-Piece 1Mb Nonvolatile SRAM 串行EEPROM的| 256X8 |的CMOS | TSSOP封装| 8引脚|塑料
2k x 8 3V/5V Operation Static RAM 串行EEPROM的| 256X8 |的CMOS | TSSOP封装| 8引脚|塑料
Single/Dual/Triple/Quad ATM/Packet PHYs with Built-In LIU 串行EEPROM的| 256X8 |的CMOS |专科| 8引脚|塑料
|
Microchip Technology, Inc.
|
| DS2065W DS2065W-100 |
3.3V Single-Piece 8Mb Nonvolatile SRAM
|
Maxim Integrated Products
|
| DS3070W-100 DS3070W |
3.3V Single-Piece 16Mb Nonvolatile SRAM with Clock
|
MAXIM[Maxim Integrated Products]
|
| DS3030W DS3030W-100 |
3.3V Single-Piece 256kb Nonvolatile SRAM with Clock
|
http://
Dallas Semiconductor
|
| DS2030Y DS2030Y-70 DS2030AB-100 DS2030AB-70 |
Single-Piece 256kb Nonvolatile SRAM 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PBGA256
Single-Piece 256kb Nonvolatile SRAM 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PBGA256
|
Maxim Integrated Products, Inc.
|
| IS61VPS204818A |
1MB x 36/ 2Mb x 18 36Mb SYNCHRONOUS PIPELINED / SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution
|
| M29W008AB M29W008AB100N1T M29W008AB100N5T M29W008A |
8 MBIT (1MB X8, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY
8 Mbit 1Mb x8, Boot Block Low Voltage Single Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| DS2030W-100 |
3.3V Single-Piece 256kb Nonvolatile SRAM 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PBGA256
|
Maxim Integrated Products, Inc.
|
| M29W800B |
8Mbit (1Mb x8 or 512Kb x16, Boot Block) Low Voltage Single Supply Flash Memory(8Mb低压闪速存储器)
|
意法半导
|
| MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM)
32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出，流通式同步脉冲静态RAM)
64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆，3.3V的输输出，流通式同步脉冲静态内存）
|
Micron Technology, Inc.
|
