| PART |
Description |
Maker |
| NE3509M14 |
N-Channel GaAs HJ-FET, L to C Band Low Noise Amplifier
|
Renesas Electronics Corporation
|
| NE3519M04 NE3519M04-T2 NE3519M04-T2B |
N-channel GaAs HJ-FET, L to C Band Low Noise Amplifier
|
Renesas Electronics Corporation
|
| NE76084 NE76084-SL NE76084-T1 NE76084-T1A |
C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET C到Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| NE713 NE71300-L NE71300-N NECCORP.-NE713 |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET
L降至Ku波段低噪声放大器N沟道砷化镓场效应晶体
|
NEC Corp.
|
| MGF1402B |
LOW NOISE GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGF1303B 1303B MGF1303 |
From old datasheet system
LOW NOISE GAAS FET
|
Mitsubishi Electric Semiconductor
|
| MGF1403B 1403B |
LOW NOISE GaAs FET 低噪声砷化镓场效应管
From old datasheet system
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| NE3516S02-T1C-A NE3516S02-T1D-A NE3516S02-15 |
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|
| NE3520S03 NE3520S03-T1C NE3520S03-T1D |
N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain
|
Renesas Electronics Corporation
|
| SPF-2000 |
Low Noise High Linearity pHEMT GaAs FET 0.1 - 12 GHz Operation
|
SIRENZA[SIRENZA MICRODEVICES]
|
| CFY25-20 CFY25-17 CFY25-23 Q62703-F107 Q62703-F106 |
Advanced PFC/PWM Combination Controllers 20-SOIC -40 to 105
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) 砷化镓场效应管（低噪声高增益对于前端放大器离子注入平面结构全部镀金）
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
|
SIEMENS AG
|
