| PART |
Description |
Maker |
| CY62126DV30L CY62126DV30L-55ZSI CY62126DV30L-70BVI |
1-Mbit (64K x 16) Static RAM 1兆位4K的16）静态RAM
Circular Connector; Body Material:Aluminum; Series:PT00; Number of Contacts:32; Connector Shell Size:18; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:18-32
Memory : MicroPower SRAMs
|
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C194-12VC CY7C194-15PC CY7C194-35 CY7C194-25VC |
SRAM|64KX4|CMOS|SOJ|24PIN|PLASTIC
Memory : Async SRAMs
64K x 4 Static RAM
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
|
| CXK77Q36162GB |
MEMORY-UHS Synch SRAMs 16Meg Ultra-High-Speed Synchronous SRAM (512K x 36) (24 pages 311K Rev. 7/3/02) 内存超高强同步SRAM6Meg超高速同步SRAM（为512k × 36）（2431.1牧师7/3/02
|
Sharp, Corp.
|
| IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V657 |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM
256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100
256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| CY7C128A-35PC CY7C128A-35VC CY7C128A-45SC CY7C128A |
2K x 8 Static RAM
Memory : Async SRAMs
|
Cypress Semiconductor
|
| GS832218B-133 GS832218B-133I GS832218B-150 GS83221 |
64K 3.3 VOLT SERIAL CONFIGURATION PROM 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
GIGABASE 350 CAT5E PATCH 1 FT, SNAGLESS, WHITE 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万18100万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MB的S /双氰胺同步突发静态存储器
2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 200万1800万36，为512k × 72分配36MBS /双氰胺同步突发静态存储器
DIODE, ZENER, 4.3V, 0.5W, 5%, -65-175C, DO-35
(GS832218 / GS832236 / GS832272) S/DCD Sync Burst SRAMs
|
ETC
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| GS816273C-250 GS816273C-250I GS816273C-225 GS81627 |
18Mb Burst SRAMs
256K x 72 18Mb S/DCD Sync Burst SRAMs
|
GSI[GSI Technology]
|
| CY7C1020CV33 CY7C1020V3 CY7C1020V33 CY7C1020CV33-1 |
32K x 16 Static RAM 32K X 16 STANDARD SRAM, 15 ns, PDSO44
Memory : Async SRAMs
512K (32K x 16) Static RAM
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C1302DV25-167BZC CY7C1302DV25-167BZI CY7C1302DV |
9-Mbit Burst of Two Pipelined SRAMs with QDR Architecture
9-Mbit Burst of Two Pipelined SRAMs with QDR垄芒 Architecture
9-Mbit Burst of Two Pipelined SRAMs with QDR⑩ Architecture
|
Cypress Semiconductor
|
| LT1301 LT1301I LT1301IS8 LT1301CS8 LT1301C LT1301C |
Micropower High Efficiency 5V/12V Step-Up DC/DC Converter for Flash Memory 0.75 A SWITCHING REGULATOR, 155 kHz SWITCHING FREQ-MAX, PDSO8
From old datasheet system
|
Linear Technology, Corp.
LINER[Linear Technology]
|
