| PART |
Description |
Maker |
| CSB1370 CSB1370F CSB1370D CSB1370E |
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 160 - 320 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE.
30.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE.
PNP Silicon Epitaxial Power Transistor
|
CDIL[Continental Device India Limited]
|
| CFB1063 CFB1063P CFD1499Q |
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 200 hFE. Complementary CFD1499
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 100 - 200 hFE. Complementary CFD1499P
2.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 120 hFE. Complementary CFB1063Q
|
Continental Device India Limited
|
| BD908 |
90.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 15.000A Ic, 5 hFE.
|
Continental Device India Limited
|
| CFA1535Q |
15.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 1.000A Ic, 95 - 155 hFE. Complementary CFC3944Q
|
Continental Device India Limited
|
| CFA1046Y |
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CFC2026Y
|
Continental Device India Limited
|
| 2SA1703 0123 2SC4483 |
PNP Epitaxial Planar Silicon Transistors for Low-Frequency Amplifier,Electronic Governor Applications(用于低频放大器，电子控制器应用的PNP硅外延平面型晶体
PNP/NPN Epitaxial Planar Silicon Transistors
From old datasheet system
NPN Epitaxial Planar Silicon Transistor Low-Frequency Amplifier, Electronic Governor Applications
PNP Epitaxial Planar Silicon Transistor Low-Frequency Amplifier, Electronic Governor Applications
|
Sanyo Electric Co.,Ltd.
|
| EN3025A 2SA1705 2SA170512 EN3025 |
Bipolar Transistor, -50V, -1A, Low VCE(sat), PNP Single NMP
Low-Frequency Power Amplifi er Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| 2SA1015L A1015 2SA1015 |
PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| CJF15031 CJF15030 |
36.000W Medium Power PNP Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 40 hFE.
36.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 8.000A Ic, 20 hFE.
|
Continental Device India Limited
|
| 12A02CH12 EN7482A EN7482 |
Bipolar Transistor, -12V, -1A, Low VCE(sat) PNP Single CPH3
Low-Frequency General-Purpose Amplifier Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| KSA812 |
PNP (LOW FREQUENCY AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
