| PART |
Description |
Maker |
| HAT1126R HAT1126R-EL-E HAT1126RJ HAT1126RJ-EL-E |
Transistors>Switching/MOSFETs
Silicon P Channel Power MOS FET High Speed Power Switching P通道功率MOS FET的高速电源开
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| MP4401 E002512 |
HIGH POWER, HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING
From old datasheet system
|
Toshiba
|
| LTC1697 LTC1697EMS LTC1697EMSPBF |
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
High Efficiency Low Power 1W CCFL Switching Regulator
|
LINEAR TECHNOLOGY CORP
|
| MP420807 |
High Power High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
|
Toshiba Semiconductor
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| 2N2222ADCSM |
High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型NPN晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| MP4514 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA[Toshiba Semiconductor]
|
| BD9130NV BD9130NV09 BD9130NV-E2 |
2 A SWITCHING REGULATOR, 1200 kHz SWITCHING FREQ-MAX, DSO8 5 X 6 MM, 1.27 MMPITCH, LEAD FREE, SON-8
Output 2A or More High-efficiency Step-down Switching Regulator with Built-in Power MOSFET
|
Rohm
|
| BD8960NV-E2 BD8960NV10 |
2 A SWITCHING REGULATOR, 1200 kHz SWITCHING FREQ-MAX, PDSO8 5 X 6 MM, ROHS COMPLIANT, SON-8
Low Noise High Efficiency Step-down Switching Regulator with Built-in Power MOSFET
|
Rohm
|
