| PART |
Description |
Maker |
| NCP1050ST100 NCP1050ST44 NCP1052P136 NCP1050/D NCP |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
2 A SWITCHING REGULATOR, 50 kHz SWITCHING FREQ-MAX, PDSO4
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 2 A SWITCHING REGULATOR, 154 kHz SWITCHING FREQ-MAX, PDIP8
24 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor 24字符X2行，5X7点矩阵字符和光标
|
ON Semiconductor
|
| MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| 2SK2723 2SK2723JM |
Nch power MOSFET MP-45F high-speed switching
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| 2SJ529 2SJ529L 2SJ529S |
Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| MP4501 |
N CHANNEL MSO TYPE (HIGH POWER HIGH SPEED SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| 2SA1776 2SA1727 2SA1812 A5800343 2SA18121 |
High-voltage Switching Transistor (Telephone power supply)
High-voltage Switching Transistor (Telephone power supply) (-400V/ -0.5A)
High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A)
High-voltage Switching Transistor (Telephone power supply) (-400V -0.5A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
High-voltage Switching Transistor ( 400V, 0.5A)
|
ROHM[Rohm]
|
| FS70UMJ-2 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 70 A, 100 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
|
| 2N2222ADCSM |
High Speed Medium Power NPN Switching Transistor In Hermetic Cermic Surface Mount Package For High Reliability Application(高速、中等功率、开关型NPN晶体管（高可靠性、陶瓷表贴封装）)
DUAL HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
