PART |
Description |
Maker |
RF5117C RF5117CPCBA |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices
|
RF5117 RF5117PCBA |
3V, 1.8GHz TO 2.8GHz LINEAR POWER AMPLIFIER
|
RFMD[RF Micro Devices]
|
INA-34063 |
3.0 GHz Medium Power Silicon RFIC Amplifier(3.0 GHz中等功率硅射频集成电路放大器) 3V Fixed Gain. Medium Power Amplifier 3.0 GHz的中功率硅射频放大器.0千兆赫中等功率硅射频集成电路放大器)
|
Agilent(Hewlett-Packard)
|
SZA-3044 SZA-3044Z |
2.7-3.8GHz 5V 1W Power Amplifier
|
SIRENZA[SIRENZA MICRODEVICES]
|
RF5603L50PCK-410 RF5603H50PCK-410 RF5603SR |
3.0V TO 5.0V, 3.3GHz TO 3.8GHz LINEAR POWER AMPLIFIER
|
RF Micro Devices
|
2SC3279 E000814 SC3279 2SC3269 |
Silicon NPN transistor for strobo flash applications and medium power amplifier applications STOROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS From old datasheet system NPN EPITAXIAL TYPE (STOROBO FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS) NPN EPITAXIAL TYPE (STOROBO FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS)
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TGA1073A TGA1073A-SCC |
26- 34 GHz Medium Power Amplifier 26000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TriQuint Semiconductor, Inc. TRIQUINT[TriQuint Semiconductor]
|
SZP-3026Z |
3.0-3.8GHz 2W InGaP Amplifier
|
SIRENZA[SIRENZA MICRODEVICES]
|
2SC3072 |
TRANSISTOR (STROBE FLASH/ MEDIUM POWER AMPLIFIER APPLICATIONS) Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications
|
Toshiba Semiconductor
|
MAAM28000 |
Wide Band GaAs MMIC Amplifier 2-8GHz
|
MACOM[Tyco Electronics]
|
MAX2700 MAX2700ECM MAX2701 MAX2700-MAX2701 MAX2701 |
1.8GHz to 2.5GHz.Direct-Downconversion Receivers 1.8GHz.5GHz的直接变频接收器 1.8GHz to 2.5GHz Direct Downconversion Receivers RF/MICROWAVE DOWN CONVERTER
|
Maxim Integrated Products, Inc.
|
CMM1434-SM-0G0T CMM1434-SM07 |
13.50-14.50 GHz 2.5-Watt Power Amplifier 13500 MHz - 14500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 13.50-14.50 GHz 2.5-Watt Power Amplifier 13.50-14.50吉赫2.5瓦功率放大器
|
Mimix Broadband, Inc.
|