| PART |
Description |
Maker |
| AN1L3M AN1L3M-T AN1L3M-T/JD AN1L3M-T/JM AN1L3MC AN |
on-chip resistor PNP silicon epitaxial transistor 芯片电阻进步党硅外延晶体
Hybrid transistor
|
NEC, Corp.
|
| CE1N2R CE1N2R-T |
Hybrid transistor
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
|
NEC Electronics
NEC[NEC]
|
| AA1F4Z AA1F4Z-T/JD AA1F4Z-T/JM AA1F4Z/JM |
Hybrid transistor
On-chip resistor NPN silicon epitaxial transistor For mid-speed switching
|
NEC[NEC]
NEC Corp.
|
| CE1F3P CE1F3P-T |
Hybrid transistor
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
From old datasheet system
|
NEC Electronics
NEC[NEC]
|
| MPSA12DA MPSA12DB MPSA12DC MPSA42DB MPSA42DC MPSA4 |
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | CHIP 晶体管|晶体管|进步党| 150伏五（巴西）总裁|芯片
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | CHIP 晶体管|晶体管|达林顿|叩| 60V的五（巴西）总裁|芯片
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | CHIP 晶体管|晶体管| npn型| 140伏特五（巴西）总裁|芯片
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | CHIP
TRANSISTOR | BJT | DARLINGTON | NPN | 30V V(BR)CEO | CHIP
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|CHIP
TRANSISTOR|BJT|DARLINGTON|NPN|30VV(BR)CEO|CHIP
|
Zetex Semiconductor PLC
Central Semiconductor, Corp.
Cypress Semiconductor, Corp.
|
| LDB211G9010C-001 LDB212G4005C-001 LDB181G8405C-110 |
Chip Multilayer Hybrid Baluns
|
MURATA[Murata Manufacturing Co., Ltd.]
|
| LDC311G6003B-601 |
Chip Multilayer Hybrid Couplers
|
Murata
|
| GA1L3M GA1L3M-T2 GA1L3M-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC[NEC]
|
| GN1A4P GN1A4P-T1 GN1A4P-T2 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC[NEC]
|
| GN1L3M GN1L3M-T2 GN1L3M-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR
|
NEC
|
| GA1L4M GA1L4M-T2 GA1L4M-T1 |
Hybrid transistor
MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR
|
NEC
|
