| PART |
Description |
Maker |
| B72735D0050H062 |
CeraDiode SMD type, array, case size 1012
|
EPCOS[EPCOS]
|
| CAS16D14 |
Transponder RX antenna< SMD Type: CAS Series>
|
SUMIDA[Sumida Corporation]
|
| FX1V-288P-DSA FX1V-288P-DSAL FX1V-288S-DS FX1V-288 |
RES ARRAY 10 OHM 8 TERM 4RES SMD 1.27mm间距连接
1.27mm Pitch Connector 1.27mm间距连接
RES ARRAY 100 OHM 8TERM 4RES SMD
RES ARRAY 22 OHM 4 TERM 2RES SMD
RES ARRAY 33 OHM 4 TERM 2RES SMD
RES ARRAY 56 OHM 4 TERM 2RES SMD
|
HIROSE ELECTRIC Co., Ltd.
Hirose Electric USA, INC.
HIROSE[Hirose Electric]
|
| CDS3 |
CeraDiode Reliable ESD protection of single lines
|
EPCOS
|
| KMM5364005CSW KMM5364005CSWG |
4M X 36 DRAM SIMM USING 4MX16 & QUAD CAS 4MX4, 4K REFRESH, 5V
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
SAMSUNG[Samsung semiconductor]
|
| V53C1664H |
High Performance Fast Page Mode Dual Cas CMOS Dynamic RAM
HIGH PERFORMANCE 64K X 16 BIT FAST PAGE MODE DUAL CAS CMOS DYNAMIC RAM
|
Mosel-Vitelic
MOSEL[Mosel Vitelic, Corp]
|
| KMM5361203C2W |
1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
|
Samsung Semiconductor
|
| KMM5368003BSWG KMM5368003BSW |
8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5362203C2WG KMM5362203C2W |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| BLA2ABB220SN4D BLA2ABB221SN4D BLA2AAG601SN4D BLA2A |
FERRITE ARRAY 220 OHM 0804 SMD 4 FUNCTIONS, 0.05 A, FERRITE CHIP
4 FUNCTIONS, 0.2 A, FERRITE CHIP EIA STD PACKAGE SIZE 0804, 8 PIN
FERRITE ARRAY 600 OHM 0804 SMD
|
Murata Manufacturing Co., Ltd.
MURATA MANUFACTURING CO LTD
|
| CEE124NP-0R7MB CEE124NP-0R7MC CEE124 CEE124NP-1R3M |
POWER INDUCTORS <SMD Type: CEE Series> 1 ELEMENT, 0.75 uH, MANGANESE-ZINC-CORE, GENERAL PURPOSE INDUCTOR, SMD
POWER INDUCTORS Type: CEE Series
POWER INDUCTORS
POWER INDUCTORS <SMD Type: CEE Series
|
Sumida, Corp.
SUMIDA CORPORATION.
|
