| PART |
Description |
Maker |
| MZA3216Y241B MZA3216Y102B MZA3216D301C MZA3216R301 |
Chip Beads(SMD Array) For General Signal Line MZA Series MZA3216 Type
|
TDK Electronics
|
| B72500DXXXX |
CeraDiode Reliable ESD protection of single lines
|
EPCOS
|
| 28LV010RPDE-25 28LV010RT1DE-25 28LV010RT2DE-25 28L |
3.3V 1 Megabit (128K x 8-Bit) EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DIP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
CAP-ARR 200PF X4 100V 10% NP0(C0G) SMD-0508 PLATED-NI/SN TR-7 1K/REEL
CAP ARRAY, 2 X 10NF 50V 0508X7RCAP ARRAY, 2 X 10NF 50V 0508X7R; Capacitance:10nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 22NF 16V 0405X5RCAP ARRAY, 2 X 22NF 16V 0405X5R; Capacitance:22nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:85(degree C);
CAP ARRAY, 2 X 15PF 50V 0405NPOCAP ARRAY, 2 X 15PF 50V 0405NPO; Capacitance:0.015nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 680PF 50V 0405NPOCAP ARRAY, 2 X 680PF 50V 0405NPO; Capacitance:0.68nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 4 X 100PF 50V 0508NPOCAP ARRAY, 4 X 100PF 50V 0508NPO; Capacitance:0.1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W2A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
CAP ARRAY, 2 X 10NF 16V 0405X7RCAP ARRAY, 2 X 10NF 16V 0405X7R; Capacitance:10nF; Voltage rating, DC:16V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :20%; Tolerance, -:20%; Temp, op. max:125(degree C);
Ceramic Capacitor Array; Capacitor Type:Chip Array; Capacitance:22pF; Capacitance Tolerance: /- 10%; Voltage Rating:50VDC; Capacitor Dielectric Material:Multilayer Ceramic; Package/Case:0405; Termination:SMD RoHS Compliant: Yes
CAP ARRAY, 2 X 1000PF 50V 0405X7RCAP ARRAY, 2 X 1000PF 50V 0405X7R; Capacitance:1nF; Voltage rating, DC:50V; Capacitor dielectric type:Ceramic Multi-Layer; Series:W1A; Tolerance, :10%; Tolerance, -:10%; Temp, op. max:125(degree C);
|
Maxwell Technologies, Inc
|
| RJ11-6NX-X |
(RJ11-xN) UL Recognized CAS Certified
|
CII Technology
|
| EM484M3244VBE EM484M3244VBE-75F EM484M3244VBE-15 E |
Programmable CAS Latency
Synchronous DRAM
|
Eorex Corporation
|
| V53C1664H |
High Performance Fast Page Mode Dual Cas CMOS Dynamic RAM
HIGH PERFORMANCE 64K X 16 BIT FAST PAGE MODE DUAL CAS CMOS DYNAMIC RAM
|
Mosel-Vitelic
MOSEL[Mosel Vitelic, Corp]
|
| KMM5361203C2W |
1MBx36 DRAM Simm Using 1MBx16 And 1MBx4 Quad Cas
|
Samsung Semiconductor
|
| KMM5362203C2WG KMM5362203C2W |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| PALCE16V8H-5SC PALCE16V8H-5SI PALCE16V8H-5SI4 PALC |
CAP 47PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 47PF 200V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
EE CMOS Zero-Power 20-Pin Universal Programmable Array Logic
EE CMOS 20-Pin Universal Programmable Array Logic 电子工程的CMOS 20引脚通用可编程阵列逻辑
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 20 ns, PDIP20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 25 ns, PQCC20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 25 ns, PDIP20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 15 ns, PQCC20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 15 ns, PDIP20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 20 ns, PQCC20
CAP 47PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR 电子工程的CMOS 20引脚通用可编程阵列逻辑
CAP 47PF 100V 5% NP0(C0G) SMD-1206 SN-NIBAR SPECIAL PKG 电子工程的CMOS 20引脚通用可编程阵列逻辑
8 BIT MCU W/8K FLASH
|
Advanced Micro Devices, Inc.
Lattice Semiconductor, Corp.
ADVANCED MICRO DEVICES INC
|
| KMM5364005CKG KMM5364105CKG KMM5364105CK KMM536400 |
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K，刷新，5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
|
| KMM5364005CK |
(KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
|
Samsung Semiconductor
|
| APC3216XXX APC3216HC APC3216HD APC3216YD APC3216EC |
3.2 x 1.6 mm SMD chip LED. Mega bright green. Lens type water clear.
3.2 x 1.6 mm SMD chip LED. Blue. Lens type water clear.
3.2 x 1.6 mm SMD chip LED. Bright red. Lens type water clear.
3.2 X 1.6MM(1206) SMD CHIP LED
3.2 x 1.6 mm SMD chip LED. Super bright green. Lens type green diffused.
|
Kingbright Electronic
KINGBRIGHT[Kingbright Corporation]
Kingbright Corporation.
|
|
