| PART |
Description |
Maker |
| DTB12E DTB8F DTB12G DTB16G DTA16G DTB16F DTB8E DTB |
TRIAC|500V V(DRM)|10A I(T)RMS|TO-220 可控硅| 500V五（DRM）的| 10A条口（T）的有效值|20
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 10A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC|600V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220
|
Won-Top Electronics Co., Ltd.
ON Semiconductor
|
| BD437/D |
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA 塑料中功率硅NPN晶体
|
Crydom, Inc.
|
| Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-208AA
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218 可控硅| 200伏五（DRM）的| 40A条口（T）的有效值|18
TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 12A条口T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 200伏五（DRM）的| 5A条口（T）的有效值|20
TRIAC|600V V(DRM)|15A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 15A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 400V五（DRM）的| 25A条口（T）的有效值|20
TRIAC|600V V(DRM)|4A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 4A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 800V的五（DRM）的| 12A条口（T）的有效值|20
TRIAC|500V V(DRM)|4A I(T)RMS|TO-220 可控硅| 500V五（DRM）的| 4A条口T）的有效值|20
TRIAC|400V V(DRM)|3A I(T)RMS|TO-202 可控硅| 400V五（DRM）的| 3A条口（T）的有效值|02
TRIAC|400V V(DRM)|4A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 4A条口（T）的有效值|20
TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 12A条口（T）的有效值|20
TRIAC|400V V(DRM)|12A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 12A条口（T）的有效值|20
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218 可控硅| 400V五（DRM）的| 40A条口（T）的有效值|18
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 10A条口（T）的有效值|20
TRIAC|600V V(DRM)|40A I(T)RMS|TO-218 可控硅| 600V的五（DRM）的| 40A条口（T）的有效值|18
TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 12A条口（T）的有效值|20
THYRISTOR MODULE|TRIAC 晶闸管模块|可控
TRIAC|800V V(DRM)|15A I(T)RMS|TO-220 可控硅| 800V的五（DRM）的| 15A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
TRIAC|400V V(DRM)|4A I(T)RMS|TO-202 可控硅| 400V五（DRM）的| 4A条口（T）的有效值|02
Transient Voltage Suppressor Diodes 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五（DRM）的| 8A条口（T）的有效值|20
TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五（DRM）的| 8A条口（T）的有效值|20
TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五（DRM）的| 8A条口（T）的有效值|20
Transient Voltage Suppressor Diodes 可控硅| 700V的五（DRM）的| 25A条口（T）的有效值|20
可控硅| 200伏五（DRM）的| 10A条口（T）的有效值|20
TRIAC|300V V(DRM)|6A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-39
TRIAC|600V V(DRM)|8A I(T)RMS|TO-202
TRIAC|500V V(DRM)|8A I(T)RMS|TO-202
TRIAC|200V V(DRM)|3A I(T)RMS|TO-202
TRIAC|500V V(DRM)|25A I(T)RMS|TO-220
TRIAC|200V V(DRM)|8A I(T)RMS|TO-202
TRIAC|600V V(DRM)|3A I(T)RMS|TO-220
TRIAC|400V V(DRM)|8A I(T)RMS|TO-202
TRIAC|800V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|PRESS-13
TRIAC|500V V(DRM)|15A I(T)RMS|TO-3
TRIAC|500V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|200V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|200V V(DRM)|15A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|400V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|600V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|200V V(DRM)|10A I(T)RMS|FBASE-R-HW30
TRIAC|200V V(DRM)|10A I(T)RMS|TO-208AA
TRIAC|600V V(DRM)|10A I(T)RMS|TO-203AA
TRIAC|200V V(DRM)|20A I(T)RMS|TO-220
TRIAC|200V V(DRM)|6A I(T)RMS|TO-220
TRIAC|500V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|600V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|25A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR
TRIAC|400V V(DRM)|10A I(T)RMS|TO-8
RF inductor, ceramic core, 5% tol, SMT, RoHS
TRIAC|400V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|600V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|500V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|200V V(DRM)|25A I(T)RMS|FBASE-R
TRIAC|600V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|25A I(T)RMS|TO-220
TRIAC|400V V(DRM)|15A I(T)RMS|TO-220
TRIAC|200V V(DRM)|15A I(T)RMS|TO-220
TRIAC|500V V(DRM)|8A I(T)RMS|TO-220
TRIAC|600V V(DRM)|25A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|40A I(T)RMS|TO-208AA
TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4
TRIAC|500V V(DRM)|12A I(T)RMS|TO-220
TRIAC|200V V(DRM)|12A I(T)RMS|TO-220AB
TRIAC|400V V(DRM)|6A I(T)RMS|TO-220
TRIAC|600V V(DRM)|6A I(T)RMS|TO-220
TRIAC|700V V(DRM)|40A I(T)RMS|TO-218
TRIAC|200V V(DRM)|4A I(T)RMS|TO-220
TRIAC|600V V(DRM)|16A I(T)RMS|TO-220
TRIAC|600V V(DRM)|5A I(T)RMS|TO-220
TRIAC|200V V(DRM)|10A I(T)RMS|TO-220
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220
TRIAC|600VV(DRM)|8AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|FBASE-R
TRIAC|600VV(DRM)|25AI(T)RMS|CAN
TRIAC|600VV(DRM)|25AI(T)RMS|TO-39
TRIAC|800VV(DRM)|25AI(T)RMS|TO-220AB
THYRISTORMODULE|TRIAC
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220AB
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218VAR
TRIAC|600VV(DRM)|25AI(T)RMS|PRESS-13
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
|
Samsung Semiconductor Co., Ltd.
Vishay Intertechnology, Inc.
STMicroelectronics N.V.
Xicon Passive Components
Anpec Electronics, Corp.
Littelfuse, Inc.
International Rectifier, Corp.
Motorola Mobility Holdings, Inc.
Electronic Theatre Controls, Inc.
Mitsubishi Electric, Corp.
Jiangsu Changjiang Electronics Technology Co., Ltd.
GTM, Corp.
|
| STK10C48-5P35 STK10C48-5P35I STK10C48-5P30 STK10C4 |
NVRAM (EEPROM Based)
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:50mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Current, It av:10A; Gate Trigger Current Max, Igt:50mA; Holding Current:50mA RoHS Compliant: Yes
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:15A; Holding Current:70mA
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:20mA; Current, It av:16A; Gate Trigger Current Max, Igt:20mA; Holding Current:35mA RoHS Compliant: Yes
Triac; Triac Type:Internally Triggered; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):15A; Gate Trigger Current (QI), Igt:25uA; Package/Case:TO-220; Gate Trigger Current Max, Igt:1.5A
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:35mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:80mA; Package/Case:3-TO-220; Current, It av:16A; Gate Trigger Current Max, Igt:80mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:10A; Gate Trigger Current Max, Igt:50mA NVRAM中（EEPROM的基础
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA NVRAM中（EEPROM的基础
|
Atmel, Corp.
|
| Q62702-B257 BBY34D Q62702-B194 BBY34C |
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ˇ 12 V) 硅调谐变容二极管（Hyperabrupt交界调谐二极管频率线性调谐范 12五）
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:35mA; Current, It av:12A; Forward Current:12A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 12 V)
Silicon Tuning Varactors (Hyperabrupt junction tuning diode Frequency linear tuning range 4 ?12 V)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| X24165SG-2.7 X24165GV X24165GG X24165GP X24165F X2 |
Advanced 2-Wire Serial E2PROM with Block LockTM Protection
TRIAC,TMG3C60F,3A,600V TO-220F,THRUHOLE NON-ISOLATED
TRIAC,TMG2D80D,2A,800V,TO-252 D PACK,SMD SENSITIVE GATE
TRIAC,TMG2DQ60D,2A,600V,TO-252 D PACK,SMD (TJ=150 OCTRIAC)
TRIAC,TMG3C60D,3A,600V,TO-252 D PACK,SMD STANDARDTRIAC
TRIAC,TMG16D80F,16A,800V TO-220F,THRUHOLE ISOLATED
TRIAC,TMG3CQ60D,3A,600V,TO-252 D PACK,SMD (TJ=150 OCTRIAC)
|
IC MICROSYSTEMS Sdn. Bhd.
|
| AC12FSMA AC12DSMA |
12A resin insulating TRIAC
10A resin insulating TRIAC
12A RESIN INSULATION TYPE TRIAC
|
NEC[NEC]
|
| Z88C00-20VSC Z88C00-25VEC Z88C00-20VEC Z88C01-25VE |
Triac; Thyristor Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Current, It av:6A; Gate Trigger Current Max, Igt:35mA; Holding Current:35mA RoHS Compliant: Yes
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218X; Current, It av:40A; Gate Trigger Current Max, Igt:100mA
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:35mA; Package/Case:V-PAK; Current, It av:6A; Gate Trigger Current Max, Igt:35mA
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Holding Current:50mA; Leaded Process Compatible:Yes RoHS Compliant: Yes
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:4A; Holding Current:30mA
Microcontroller 微控制器
Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):40A; Gate Trigger Current (QI), Igt:100mA; Package/Case:3-TO-218; Current, It av:40A; Gate Trigger Current Max, Igt:100mA 8位微控制
|
Maxim Integrated Products, Inc.
|
| STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
|
|
| A29001 A290011T-55 A290011T-70 A290011TL-70 A29001 |
128K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
5015 RR 4#12 SKT RECPT
5015 RR 4#12 PIN RECPT
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:400V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
128K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K的8位CMOS 5.0伏只，引导扇区闪
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
| IRG4PC30U IRG4PC30UPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| BCR20CM12LB BCR20CM-12LB-15 |
Triac
600V - 20A - Triac Medium Power Use
|
Renesas Electronics Corporation
|
|
