| PART |
Description |
Maker |
| BSP16T1 |
SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| BSP16T1_D ON0219 |
SOT-223 PACKAGE NPN SILICON
From old datasheet system
|
ON Semi
|
| BCP53-16T1G |
High Current Transistor PNP; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 1.5 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-261AA
|
ON Semiconductor
|
| CZT7120 |
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 3A I(C) | SOT-223
|
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
| 20CJQ045 20CJQ045TR |
45V 2A Schottky Common Cathode Diode in a SOT-223 package
|
International Rectifier
|
| IRLL3303TR |
30V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRLL014N IRLL014NTR |
55V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| PHT8N06LTT/R |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 3.5A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 3.5AI（四）|的SOT - 223
|
NXP Semiconductors N.V.
|
| BUK9880-55T/R |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 7.5A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 7.5AI（四）|的SOT - 223
|
Pulse Engineering, Inc.
|
| STN3NE06L 6045 |
N-CHANNEL 60V - 0.08 OMH - 3A - SOT-223 - STRIPFET POWER MOSFET
N - CHANNEL 60V - 0.10 ohm - 3A - SOT-223 STripFETO POWER MOSFET
N - CHANNEL 60V - 0.10 - 3A - SOT-223 STripFET TM POWER MOSFET
From old datasheet system
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
