| PART |
Description |
Maker |
| TB62004FW B62006F TB62003FW TB62008F TB62008FW TB6 |
8CH DMOS TRANSISTOR ARRAY WITH GATE THROUGH & DMOS DRIVER
Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC 8CH DMOS TRANSISTOR ARRAY WITH GATE
8CH DMOS TRANSISTOR ARRAY WITH GATE INVERTER & DMOS DRIVER
8CH DMOS TRANSISTOR ARRAY WITH GATE NOR & DMOS DRIVER
8CH DMOS TRANSISTOR ARRAY WITH GATE NAND & DMOS DRIVER
|
TOSHIBA
|
| BS828 |
DMOS Transistors (N-Channel)
|
GE[General Semiconductor]
|
| 2N7002 |
DMOS Transistors (N-Channel)
|
GE[General Semiconductor]
|
| BS209 |
DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE Security, Inc.
General Semiconductor
|
| BS809 |
DMOS Transistors (N-Channel)(N通道DMOS晶体 DMOS晶体管（N沟道）（不适用通道的DMOS晶体管）
|
General Semiconductor
GE Security, Inc.
|
| STP9434 |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN9926 |
The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| STN9926AA |
The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
|
Stanson Technology
|
| STN4822 |
STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| ZVN0120L ZVN0120 ZVN0120A ZVN0120B |
BV(dss): 200V; I(d): 0.16A; R(ds): 16 Ohm; N-channel enhancement-mode vertical DMOS FET
N CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
ZETEX[Zetex Semiconductors]
|
| TDA7296V TDA7296 |
70V - 60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY 70V 60瓦的DMOS音频放大器静意法半导体，
60V-60W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY
|
STMicroelectronics N.V.
ST Microelectronics
意法半导
SGS Thomson Microelectronics
|
| STN8205D STN8205DST6RG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
