| PART |
Description |
Maker |
| BS223 |
DMOS Transistors (P-Channel)
DMOS Transistors (P-Channel)(P通道DMOS晶体
|
GE[General Semiconductor]
GE Security, Inc.
|
| 2N7000 |
DMOS Transistors (N-Channel)
|
http://
GE[General Semiconductor]
|
| 2N7002 |
DMOS Transistors (N-Channel)
|
GE[General Semiconductor]
|
| FDPF10N60NZ |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Fairchild Semiconductor
|
| STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4488L |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| STP9434 |
STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
500V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| VN0300L VN0300 VN0300B VN0300D |
N-Channel Enhancement-Mode Vertical DMOS FETs
N-Channel Enhancement-Mode Vertical DMOS Power FETs
|
Supertex Inc
|
| 2SC4015 2SC3415S 2SC4061K |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
ROHM
|
| ST2301SRG ST2301A |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
