| PART |
Description |
Maker |
| K4S64323LF-DG_S15 K4S64323LF-DG_S1H K4S64323LF-DG_ |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-SOIC -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP -55 to 125
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| K4S64323LF-DN15 K4S64323LF-DN15-PB K4S64323LF-DN1H |
2M X 32 SYNCHRONOUS DRAM, 9 ns, PBGA90
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 0 to 70 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 14-SOIC 2Mx32移动SDRAM 90FBGA
Replaced by TLC2202A : Advanced LinCMOS(TM) Low-Noise Precision Dual Operational Amplifier 8-PDIP 0 to 70 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 2Mx32移动SDRAM 90FBGA
Low Noise Precision Advanced LinCMOS(TM) Dual Operational Amplifier 20-LCCC -55 to 125 2Mx32移动SDRAM 90FBGA
2Mx32 Mobile SDRAM 90FBGA 2Mx32移动SDRAM 90FBGA
Dual Rail-To-Rail Micropower Operational Amplifier 8-SOIC 0 to 70
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HYMR16416 HYMR16418H-840 |
32Mx16|2.5V|40|-|Direct RDRAM - 64MB RIMM
64M X 18 DIRECT RAMBUS DRAM MODULE, 40 ns, DMA184 RIMM-184
|
Hynix Semiconductor, Inc.
|
| LTC5599 |
30MHz to 1300MHz Low Power Direct Quadrature Modulator
|
Linear Technology, Corp.
|
| XCV800 XC4VFX60 XC2VP100 XC3S400 XC2S50 XC2VP50 XC |
Platform Flash In-System Programmable Configuration PROMS
Low-Power Advanced CMOS NOR FLASH Process
Low-Power Advanced CMOS NOR FLASH Process
|
http://
Xilinx, Inc
|
| FDG6301N |
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
|
TY Semiconductor Co., L...
|
| FDG6304P |
Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
|
TY Semiconductor Co., L...
|
| KBPC1506F KBPC1506FW KBPC1502F KBPC1502FW KBPC1501 |
Dual Low-Noise Rail-To-Rail Operational Amplifier 8-PDIP 0 to 70 硅桥式整流器
Rail-To-Rail Low Power Advanced LinCMOS(TM) Dual Operational Amplifier 8-CDIP -55 to 125 硅桥式整流器
Advanced LinCMOS(TM) Rail-To-Rail Quad Operational Amplifier 14-TSSOP -40 to 125
Silicon-Bridge Rectifiers
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Diotec Elektronische
|
| ADP150 ADF4351 |
Broadband, Low Error Vector Magnitude (EVM) Direct Conversion Transmitter Using LO Divide-by-2 Modulator
Broadband, Low Error Vector Magnitude (EVM) Direct Conversion Transmitter Using LO Divide-by-2 Modulator
|
Analog Devices
|
| AUIRFZ24NL AUIRFZ24NS AUIRFZ24NSTRR AUIRFZ24NSTRL |
Advanced Planar Technology Low On-Resistance
|
International Rectifier
|
| AUIRFZ34N |
Advanced Planar Technology Low On-Resistance
|
International Rectifier
|
| STI7105 STI7105ZUB |
Low cost advanced HD decoding IC for STB
|
STMicroelectronics
|
