| PART |
Description |
Maker |
| 1SV229 |
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
Variable Capacitance Diode VCO for UHF Band Radio
|
Toshiba Semiconductor
|
| 1SV257 |
RF Varactor Diodes
Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管（用于UHF波段无线电台
Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
|
Toshiba Corporation
Toshiba Semiconductor
|
| BB215 |
UHF variable capacitance diode
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
Philipss
|
| BB146 |
UHF variable capacitance diode
|
NXP Semiconductors
|
| BB215 |
UHF Variable Capacitance Diode
|
Guangdong Kexin Industrial Co.,Ltd
|
| BB154 |
UHF variable capacitance diode
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
Philipss
|
| BB179 |
UHF VARIABLE CAPACITANCE DIODE
|
Unisonic Technologies
|
| MA27V18 |
UHF BAND, 2.89 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC CORP
|
| DO234B DO224B-3M 1M234 |
HF-UHF BAND, 22 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
HF-UHF BAND, 10 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
SEMIKRON
|
| 1SV239 |
VARIABLE CAPACITANCE DIODE (VCO FOR UHF RADIO)
|
TOSHIBA[Toshiba Semiconductor]
|
