| PART |
Description |
Maker |
| 2SC3306 E000824 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING/ HIGH SPEED DC-DC CONVERTER APPLICATION)
From old datasheet system
SWITCHING TEGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba
|
| 1SS398 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
| CMLD2004 CMLD2004S CMLD2004A CMLD2004C CMLD2004DO |
SMD Switching Diode Dual: Common Cathode
SMD Switching Diode Dual: Opposing Polarity
SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES
|
CENTRAL[Central Semiconductor Corp]
|
| BAS521LP-7B BAS521LP-7 |
Discrete - Diodes (Less than 0.5A) - Switching Diodes
0.4 A, 325 V, SILICON, SIGNAL DIODE
HIGH VOLTAGE SWITCHING DIODE
|
Diodes Incorporated
|
| Q62702-A3471 BAW78M |
From old datasheet system
Silicon Switching Diode (Switching applications High breakdown voltage)
|
SIEMENS[Siemens Semiconductor Group]
|
| 2SC5172 E001056 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
From old datasheet system
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| 2SC3376 E000838 |
NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING, HIGH SPEED DC-DC CONVERTER APPLICATIONS)
From old datasheet system
SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| RM1200HE-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| RM300DG-90S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| 1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications
|
TOSHIBA
|
| 1SS399 |
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| BAS521WT |
High Voltage Switching Diode
|
SEMTECH ELECTRONICS
|
