| PART |
Description |
Maker |
| NFA31CC102R1E4 NFA31CC101S1E4 NFA31CC220S1E4 NFA31 |
EMIFIL (Capacitor type) Array
EMIFILr (Capacitor type) Array
EMIFILr (Capacitor type) Array NFA31C Series (1206 Size)
|
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co...
|
| CDS3 |
CeraDiode Reliable ESD protection of single lines
|
EPCOS
|
| PM50RVA120 |
CAP ARRAY, 4 X 3300PF 50V 0612X7RCAP ARRAY, 4 X 3300PF 50V 0612X7R; CAPACITANCE:3.3NF; VOLTAGE RATING, DC:50V; CAPACITOR DIELECTRIC TYPE:CERAMIC MULTI-LAYER; SERIES:W3A; TOLERANCE, :10%; TOLERANCE, -:10%; TEMP, OP. MAX:125(DEGREE RoHS Compliant: Yes
FLAT-BASE TYPE INSULATED PACKAGE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RJ11-6NX-X |
(RJ11-xN) UL Recognized CAS Certified
|
CII Technology
|
| KMM5364005BSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5362203C2WG KMM5362203C2W |
2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5362203C2W |
2Mx36 DRAM Simm Using 1Mx16 And 1Mx4 Quad Cas
|
Samsung Semiconductor
|
| KMM5364003BSW |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V 4米36的DRAM上海药物研究所使用4Mx16
|
Samsung Semiconductor Co., Ltd.
|
| KMM5364005CK |
(KMM5364105CK / KMM5364005CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
|
Samsung Semiconductor
|
| KM44C4103C KM44C4003C KM44C4003CK-6 KM44C4003CKL-6 |
4M x 4Bit CMOS quad CAS DRAM with fast page mode, 5V, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KMM5364003CK KMM5364103CK |
(KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
|
Samsung Semiconductor
|
