| PART |
Description |
Maker |
| K4F160412D K4F160411D-BL50 |
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode 4米4位的CMOS动态随机存储器的快速页面模
4M X 4 FAST PAGE DRAM, 50 ns, PDSO24
|
Samsung Semiconductor Co., Ltd.
|
| MB814100D-60 MB814100D-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位速页面存取模式动态RAM)
CMOS 4 M ?1 BIT Fast Page Mode DRAM(CMOS 4 M ?1浣??椤甸?瀛??妯″??ㄦ?RAM)
|
Fujitsu Limited
|
| AS4C4M4F1 AS4C4M4F0 |
5V 4M×4 CMOS DRAM （Fast Page Mode)(5V 4M×4 CMOS 动态RAM（快速页面模式）)
|
Alliance Semiconductor Corporation
|
| MB81V16160A-60 MB81V16160A-60L |
CMOS 1 M ×16 BIT
Fast Page Mode DRAM(CMOS 1 M ×16位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| NN514260A |
Fast Page Mode CMOS DRAM
|
Nippon Steel Semiconductor
|
| AS4C4M4F1-50TI AS4C4M4F0-60TC AS4C4M4F1-60TI AS4C4 |
5V 4M x 4 CMOS DRAM (Fast Page mode)
5V 4M】4 CMOS DRAM (Fast Page mode)
5V 4M?? CMOS DRAM (Fast Page mode)
5V 4M×4 CMOS DRAM (Fast Page mode)
|
ALSC[Alliance Semiconductor Corporation]
|
| AS4C1M16F5 AS4C1M16F5-60JC AS4C1M16F5-60JI AS4C1M1 |
5V 1M x 16 CMOS DRAM (fast-page mode)
|
Alliance Semiconductor
ETC[ETC]
|
| MB85326 |
CMOS 4M x 36 Fast Page Mode DRAM Module
|
Fujitsu
|
| MH8M36CNJ-6 MH4M365CXJ-6 MH16M36BJ-6 |
8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 SIMM-72
4M X 36 MULTI DEVICE DRAM MODULE, 60 ns, DMA72
16M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
|
Qimonda AG
|
| MSM514256A-10ZS MSM514256A-70RS MSM514256A-80RS |
256K X 4 FAST PAGE DRAM, 100 ns, PZIP19
256K X 4 FAST PAGE DRAM, 70 ns, PDIP20
256K X 4 FAST PAGE DRAM, 80 ns, PDIP20
|
OKI ELECTRIC INDUSTRY CO LTD
|
| HY534256AS-70 |
DRAM,FAST PAGE,256KX4,CMOS,DIP,20PIN,PLASTIC
From old datasheet system
|
Hynix Semiconductor
|
