PART |
Description |
Maker |
APTDC30H601G |
30 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE SiC Diode Full Bridge Power Module
|
MICROSEMI POWER PRODUCTS GROUP Microsemi Corporation
|
APTDF200H20G |
Diode Full Bridge Power Module
|
MICROSEMI[Microsemi Corporation]
|
APTDC30H1201G |
SiC Diode Full Bridge Power Module
|
Microsemi Corporation
|
APTDF60H601G |
Fast Diode Full Bridge Power Module
|
Microsemi Corporation
|
APT100DL60HJ |
ISOTOP Fast Diode Full Bridge Power Module
|
Microsemi Corporation
|
APT30DF120HJ |
ISOTOP Fast Diode Full Bridge Power Module
|
Microsemi Corporation
|
APT60DS04HJ |
ISOTOP Schottky Diode Full Bridge Power Module
|
Microsemi Corporation
|
APT20DC60HJ |
ISOTOP SiC Diode Full Bridge Power Module
|
Microsemi Corporation
|
APT30DL60HJ |
ISOTOP Fast Diode Full Bridge Power Module
|
Microsemi Corporation
|
APT75DF170HJ |
ISOTOP Fast Diode Full Bridge Power Module
|
Microsemi Corporation
|
APT20DC120HJ |
ISOTOP SiC Diode Full Bridge Power Module
|
Microsemi Corporation
|
CPW256A CPW255A |
TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 17.5A I(D) 晶体管| MOSFET功率模块|全桥| 500V五(巴西)直| 17.5AI(四 TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 500V V(BR)DSS | 11A I(D)
|
Electronic Theatre Controls, Inc.
|