PART |
Description |
Maker |
STY60NA20 6123 |
N-CHANNEL 200V - 0.030 OHM - 60A - FAST POWER MOS TRANSISTOR N - CHANNEL 200V - 0.030ohm - 60 A - Max247 FAST POWER MOS TRANSISTOR From old datasheet system N - CHANNEL 200V - 0.030 - 60 A - Max247 FAST POWER MOS TRANSISTOR N-CHANNEL Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
APT20M45SVFR |
POWER MOS V 200V 56A 0.045 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
APT20M11JVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 175A 0.011 Ohm
|
Advanced Power Technology
|
APT20M34BLL APT20M34SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 POWER MOS 7 200V 74A 0.034 Ohm
|
Advanced Power Technology, Ltd.
|
APT20M11JVR |
Power MOSFET; Package: ISOTOP®; ID (A): 175; RDS(on) (Ohms): 0.011; BVDSS (V): 200; 175 A, 200 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 175A 0.011 Ohm
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
APT20M10JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 200V 185A 0.010 Ohm
|
Advanced Power Technology Ltd.
|
APT20M20B2LL APT20M20LLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 200V 100A 0.020 Ohm
|
Advanced Power Technology Ltd.
|
BD241CFP |
Transient Surge Protection Thyristor; Package/Case:MS-013; Current, It av:2.2A; Reel Quantity:1500; Capacitance:80pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:200V; Holding Current:150mA 晶体管|晶体管|叩| 100V的五(巴西)总裁| 3A条一(c)| TO - 220AB现有
|
Samsung Semiconductor Co., Ltd.
|
NTD70N03R1 |
32 A, 25 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON SEMICONDUCTOR
|
IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A) Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
|
IRF[International Rectifier]
|
IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
|
International Rectifier
|