| PART |
Description |
Maker |
| APT6027HVR |
POWER MOS V 600V 20A 0.270 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT12040L2LL |
POWER MOS 7 1200V 30A 0.400 Ohm
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
|
Advanced Power Technology Ltd.
|
| HUF75321D3 HUF75321D3S FN4351 |
20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs
From old datasheet system
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036Ω, N沟道UltraFET功率MOS场效应管)
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036惟, N娌??UltraFET???MOS?烘?搴??)
|
Intersil Corporation
FAIRCHILD SEMICONDUCTOR CORP
|
| APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 MOSFET
|
Microsemi Corporation
|
| APT12067B2LL APT12067LLL |
POWER MOS 7 1200V 18A 0.670 Ohm
|
Advanced Power Technology
|
| RJH1CD5DPQ-E0 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH1CM6DPQ-E0-15 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJK60S5DPE-00-J3 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| SPA5551 SPA555N |
20A / 1000 - 1200V SiC SCHOTTKY SINGLE PHASE BRIDGE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| CRNA15 CRNA15-400 CRNA15-800 CRNB15-400PT CRNA15-6 |
15Amp - 400/600/800/1200V - RECTIFIER 15Amp - 400/600/800/1200V -整流
|
Electronic Theatre Controls, Inc.
|
