PART |
Description |
Maker |
APT15GT60BR |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 31A
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ADPOW[Advanced Power Technology]
|
APT12GT60BR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs Thunderbolt IGBT 600V 25A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs
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ADPOW[Advanced Power Technology]
|
APT15GT120BR APT15GT120BRG |
Thunderbolt IGBT
|
ADPOW[Advanced Power Technology]
|
APT60GT60JRDQ3 |
Thunderbolt IGBT
|
ADPOW[Advanced Power Technology]
|
APT100GT120JRDQ4 |
Thunderbolt IGBT
|
Microsemi Corporation
|
APT20GT60BRDQ1 APT20GT60BRDQ1G |
Thunderbolt IGBT
|
Advanced Power Technology
|
APT100GT60B2R APT100GT60B2RG APT100GT60LRG |
Thunderbolt IGBT
|
Microsemi Corporation
|
APT20GT60BR |
Thunderbolt IGBT 600V 40A
|
Advanced Power Technology
|
APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
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Microsemi Corporation http:// Microsemi, Corp.
|
APT150GT120JR |
Thunderbolt IGBT Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: ISOTOP®; BV(CES) (V): 1200; VCE(sat) (V): 3.2; IC (A): 90; 170 A, 1200 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
APT50GS60BRDQ2 APT50GS60BRDQ2G APT50GS60SRDQ2 APT5 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|