| PART |
Description |
Maker |
| APT1002R4BN APT1002RBN |
POWER MOS IV 1000V 7.0A 2.00 Ohm / 1000V 6.5A 2.40 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| APT10057WVR |
POWER MOS V 1000V 17.3A 0.570 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10050JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 1000V 19A 0.500 Ohm
|
Advanced Power Technology
|
| APT10086SVR |
POWER MOS V 1000V 13A 0.860 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT10040B2VR APT10040LVR |
POWER MOS V 1000V 25A 0.400 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
Advanced Power Technology, Ltd.
|
| APT10045JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 21A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
| APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
| APT10050JVFR |
POWER MOS V 1000V 19A 0.500 Ohm
|
Advanced Power Technology
|
| MCT3D65P100F2 MCT3A65P100F2 |
65A, 1000V, P-Type MOS-Controlled Thyristor (MCT)
DIODE ZENER SINGLE 500mW 3.9Vz 5mA-Izt 0.05 3uA-Ir 1 PowerDI-323 3K/REEL
65A / 1000V / P-Type MOS-Controlled Thyristor (MCT)
|
INTERSIL[Intersil Corporation]
|
| APT10021JFLL |
POWER MOS 7 1000V 37A 0.210 Ohm
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7 is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
