| PART |
Description |
Maker |
| KDR367 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KDR368E |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| B20A45VC |
SCHOTTKY BARRIER TYPE DIODE (LOW VF TYPE)
|
KEC(Korea Electronics)
|
| 30QWK2CZ47 |
Schottky Barrier Rectifier Stack Trench Schottky Barrier Type Switching Type Power Supply Application Converter & Chopper Application
|
TOSHIBA
|
| B5A60VIC B5A60 |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE STACK (SWITCHING TYPE POWER SUPPLY, CONVERTER & CHOPPER)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| Q62702-D1288 BAT15-020S BAT15-050S BAT15-090S BAT1 |
RESISTOR,SMD1206,1.1K,1/4W,5% SILICON, LOW BARRIER SCHOTTKY, KA BAND, MIXER DIODE
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier)
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| U2GWJ44 |
SCHOTTKY BARRIER RECTIFIER SCHOTTKY BARRIER TYPE SWITCHING MODE POWER SUPPLY APPLICATION
|
TOSHIBA[Toshiba Semiconductor]
|
| MA4E2508MSP-T MADS-002508-1112HT MA4E2508L-1112 MA |
SILICON, LOW BARRIER SCHOTTKY, KU BAND, MIXER DIODE CASE 1112, 2 PIN
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
|
NXP Semiconductors N.V.
M/A-COM Technology Solutions, Inc.
|
| SL34-AL SL32-AL SL33-AL |
Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
|
FORMOSA[Formosa MS]
|
| SL14-MH SL12-MH SL13-MH |
Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
|
FORMOSA[Formosa MS]
|
| SL33-AL SL34-AL SL32-AL |
Low VF Chip Schottky Barrier Diodes - Silicon epitaxial planer type
|
美丽微半导体有限公司
|
| MGF1304A |
FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
