| PART |
Description |
Maker |
| 2SC3254 2SC3254S |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7A I(C) | TO-220AB
60V/7A High-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SC5103 |
High speed switching transistor (60V 5A)
High speed switching transistor (60V, 5A)
|
ROHM[Rohm]
|
| 2SC586511 |
High voltage discharge, High speed switching, Low Noise (60V, 1A)
|
Rohm
|
| 2SA1870 A5800375 |
From old datasheet system
High-speed Switching Transistor (-60V, -12A)
|
ROHM[Rohm]
|
| 2SC510309 |
High speed switching transistor (60V, 5A)
High speed switching transistor (60V, 5A)
|
Rohm
|
| RJK0629DPK RJK0629DPK13 RJK0629DPK-15 |
60V, 85A, 4.5m max.N Channel Power MOS FET High-Speed Switching Use
60V, 85A, 4.5m?max. N Channel Power MOS FET High-Speed Switching Use
|
Renesas Electronics Corporation
|
| RJK0657DPA RJK0657DPA-00-J5A |
60V, 20A, 13.6m max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SC4203 E000913 |
EPITAXIAL PLANAR TYPE (VIDEO OUTPUT FOR HIGH DEFINITION VDT HIGH SPEED SWITCHING APPLICATIONS)
From old datasheet system
VODEO OUTPUT FOE HIGH DEFINTION VDT HIGH SPEED SWITCHING APPLICATIONS
|
Toshiba Semiconductor
|
| FS3UM-18 FS3UM-18A FS4VS-12 FS20SM-6 FS40SM-6 FS3U |
HIGH-SPEED SWITCHING USE 高速开关使
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric, Corp.
Powerex Power Semiconductors
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FGW15N120VD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
| FGW15N120HD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
