| PART |
Description |
Maker |
| 2DI150M-050 |
POWER TRANSISTER MODULE
|
FUJI[Fuji Electric]
|
| 2SD2478 |
MEDIUM POWER TRANSISTER
|
ROHM
|
| PCF35N08 |
N Channel Enhancement Mode Power Field Effect Transister Chip
|
General Electric Solid State
|
| MTP1N60 |
Power Field Effect Transister N-Channel Enhancement Mode Silicon Gate
|
Motorola, Inc
|
| EMZ52 |
General Purpose Transister
|
ROHM
|
| 2SD2150 |
LOW FREQUENCY TRANSISTER
|
Galaxy Semi-Conductor H...
|
| SC15A-5SDAC-Z |
Power Module
Switch-Power Non-Isolated DC-DC Converters 5V to 1.3-3.5V 15A 1-OUTPUT DC-DC REG PWR SUPPLY MODULE
|
Bourns, Inc.
|
| BSM50GD120DN2 C67076-A2514-A67 |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（功率模相全桥包括快速滑行二极管
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BSM200GT120DN2 200T12N2 C67070-A2519-A67 |
IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) IGBT功率模块（焊电源模块3相全桥包括快速滑行二极管
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| APTGF150A60T3AG |
Phase leg NPT IGBT Power Module Power Module
|
Microsemi Corporation
|
| C67076-A2510-A67 BSM15GD60DN2 SIEMENSAG-BSM15GD60D |
IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes) 15 A, 600 V, N-CHANNEL IGBT
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| C67076-A1004-A2 BSM151 |
SIMOPAC Module (Power module Single switch N channel Enhancement mode) 48 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
