| PART |
Description |
Maker |
| 2SC3583 |
MICROWAVE LOW NOISE AMPLIFIER
|
California Eastern Labs
|
| BRF630 |
NPN Low Noise Silicon Microwave Transistor
|
Bipolarics
|
| Q62702-F527 BFQ28 |
LOW NOISE NPN SILICON MICROWAVE TRANSISTOR UP TO 4GHz
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MP4T64539 MP4T645 MP4T64500 MP4T64533 MP4T64535 |
Silicon Bipolar High fT Low Noise Microwave Transistors
|
MPLUSE[M-pulse Microwave Inc.]
|
| 2SC3603 |
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
|
NEC[NEC]
|
| INA-12063 INA-12063-TR1 INA-12063-BLK |
1500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
1.5 GHz的低噪声自偏置晶体管放大
1.5 GHz Low Noise Self-Biased Transistor Amplifier
|
http://
|
| 5962-9093003MXX 5962-9093002M3X 5962-9093002MXX 59 |
Pin-Programmable Universal and Bandpass Filters
DC-to-Microwave, 5V Low-Noise Amplifier x8存储
|
Optoway Technology, Inc.
|
| CFK0301 CFK0301-AK-000T |
500 MHz - 4000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
High Dynamic Range Dual, Low-Noise GaAs FET
|
List of Unclassifed Manufacturers
etc
|
| AGB3300 AGB3300_REV_2.1 AGB3300S24Q1 |
50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
From old datasheet system
Gain Block Amplifiers
The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| 2SC4095 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD
|
NEC
|
| MGF1305 |
From old datasheet system
FOR MICROWAVE LOW-NOISE AMPLIFIERS N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
