| PART |
Description |
Maker |
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| 1214-150L |
150 Watts, 36 Volts, 5 ms, 20% Radar 1200 to 1400 MHz
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| 1214-300 |
300 W, 50 V, 1200-1400 MHz common base transistor
BJT
|
GHz Technology
|
| 1214-300 |
300 Watts - 50 Volts, 100us, 10% Radar 1200 1400 MHz
|
ADPOW[Advanced Power Technology]
|
| 2301 |
2.3 GHz Class C, Common Base; fO (MHz): 0; P(out) (W): 1.5; P(in) (W): 0.24; Gain (dB): 8.5; Vcc (V): 20; Cob (pF): 4; Case Style: 55BT-1 S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
1.5 Watt - 20 Volts, Class C Microwave 2300 MHz
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi, Corp.
GHZTECH[GHz Technology]
GHz Technology, Inc.
|
| 2224-6L |
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 22; Case Style: 55LV-1 S BAND, Si, NPN, RF POWER TRANSISTOR
3.3V EconoReset
6 Watts, 22 Volts, Class C Microwave 2200-2400 MHz
|
Microsemi, Corp.
GHZTECH[GHz Technology]
|
| MAGX-001214-SB0PPR MAGX-001214-125L00 MAGX-001214- |
GaN on SiC HEMT Pulsed Power Transistor 125W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| QBH-128B |
20 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
REMEC INC
|
| ZHL-1217HLN-S ZHL-1217HLNX-S |
1200 MHz - 1700 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER CASE NN92
|
Mini-Circuits
|
| PTVA123501FCV1R250 |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 1200 ?1400 MHz
|
Infineon Technologies A...
|
