| PART |
Description |
Maker |
| TGA2710 |
10.5 - 12GHz High Power Amplifier
|
TriQuint Semiconductor
|
| HMMC-3024 |
HMMC-3024 · Chip 0.5-12GHz high efficiency GaAs HBT prescalers
|
Agilent (Hewlett-Packard)
|
| TA060-120-35-30 |
6 ~ 12GHz 35dB Gain 30dBm Power Amplifier
|
Transcom, Inc.
|
| TA080-120-41-30 |
8 - 12GHz 30 dBm Amplifier
|
Transcom, Inc.
|
| RFUV1003 |
12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER
|
RFMD
|
| TA060-120-11-10 |
6 ~ 12GHz 10dBm Low Noise Amplifier
|
Transcom, Inc.
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| KSC5302DM |
High Voltage & High Speed Power Switch Application 2 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-126
High Voltage & High Speed Power Switch Application
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| BAT14-03 BAT14-03W Q62702-A1103 BAT1403W |
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SILICON, MEDIUM BARRIER SCHOTTKY, X BAND, MIXER DIODE
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| WSLT4026-15 |
Power Metal Strip? Resistors, High Temperature (275 °C),High Power, Low Value, Surface Mount, 4-Terminal
|
Vishay Siliconix
|
