| PART |
Description |
Maker |
| APT30GT60BRD |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
Thunderbolt IGBT & FRED 600V 55A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| APT40GF120JRD |
The Fast IGBTis a new generation of high voltage power IGBTs ⑩的快速IGBT是一种高压IGBT的新一
The Fast IGBT is a new generation of high voltage power IGBTs
Fast IGBT & FRED 1200V 60A
|
Advanced Power Technology, Ltd.
|
| SG35N12T SG35N12DT |
Discrete IGBTs
|
Sirectifier Semiconductors
Sirectifier Global Corp.
|
| IXBH16N170 IXBT16N170 |
Discrete IGBTs
|
IXYS
|
| SG20N12DT SG20N12T |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
|
| SG50N06T SG50N06DT |
Discrete IGBTs
|
Sirectifier Global Corp.
Sirectifier Semiconductors
ETC[ETC]
List of Unclassifed Manufacturers
|
| IXBN42N170A |
Discrete IGBTs
|
IXYS
|
| APT60GF120JRD |
Fast IGBT & FRED 1200V 100A
The Fast IGBT is a new generation of high voltage power IGBTs.
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
|
| GT20J341 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT40QR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| GT40WR21 |
Discrete IGBTs Silicon N-Channel IGBT
|
Toshiba Semiconductor
|
| IRG4PC30W IRG4PC30WPBF |
Insulated Gate Bipolar Transistors (IGBTs)(绝缘栅型双极型晶体管) 绝缘门双极晶体管（IGBTs）（绝缘栅型双极型晶体管
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
