| PART |
Description |
Maker |
| APT11GP60K APT11GP60SA |
MOSFET
POWER MOS 7 IGBT
41 A, 600 V, N-CHANNEL IGBT, TO-263AB
|
Advanced Power Technolo...
Advanced Power Technology
MICROSEMI POWER PRODUCTS GROUP
|
| APT25GP90B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT75GP120J |
MOSFET
POWER MOS 7 IGBT
|
ADPOW[Advanced Power Technology]
|
| APT11GP60BDQB |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT32GU30B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT13GP120K |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT80GP60J |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT15GP90B |
MOSFET
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. 功率MOS 7 IGBT的是一个高压电源IGBT的新一代
|
Advanced Power Technology, Ltd.
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| APT1003RKLL APT1003RKLLG |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
POWER MOS 7 MOSFET MOSFET的功率MOS 7
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
|
| APT20M38BVR APT20M38BVRG |
Power MOSFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 67A 0.038 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| APT10050B2VFR APT10050LVFR |
21 A, 1000 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET
POWER MOS V 1000V 21A 0.500 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology Ltd.
|
