| PART |
Description |
Maker |
| APT25GP90BDF1 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT25GP90B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT50GP60B2DF2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT11GP60BDQB |
POWER MOS 7 IGBT
MOSFET
|
Advanced Power Technolo...
Advanced Power Technology
|
| APT25GP120B |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT15GP60BDF1 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology Ltd.
|
| APT80GP60B2 |
MOSFET
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT15GP90B |
MOSFET
The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. 功率MOS 7 IGBT的是一个高压电源IGBT的新一代
|
Advanced Power Technology, Ltd.
|
| APT6010B2LL APT6010LLL APT6010LLLG APT6010B2LLG |
54 A, 600 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
POWER MOS 7 MOSFET
|
Microsemi Corporation
|
| APT45GP120JDQ2 |
75 A, 1200 V, N-CHANNEL IGBT
POWER MOS 7 IGBT
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
| IRFR9210N IRFRU9120N IRFU9120N FR9120N |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) 功率MOSFET（减振钢板基本\u003d- 100V的，的Rds（on）\u003d 0.48ohm，身份证\u003d- 6.6A
P Channel Straight Lead HEXFET Power MOSFET(P沟道HEXFET功率MOS场效应管) P通道直铅HEXFET功率MOSFET的性（P沟道的HEXFET功率马鞍山场效应管）
P Channel Straight Lead HEXFET Power MOSFET(P娌??HEXFET???MOS?烘?搴??)
|
IRF
International Rectifier, Corp.
|
