| PART |
Description |
Maker |
| 2SC4572 |
800V/20mA Switching Applications
|
Sanyo Semicon Device
|
| 2SC4579 |
NPN Triple Diffused Planar Silicon Transistor 900V/20mA Switching Applications
|
SANYO
|
| 2SK2294 A5800288 |
Switching (800V, 3A)
From old datasheet system
|
ROHM
|
| EDS-220-Z-LA-I EDS-260-Z-LA-I EDS-370-Z-LA-I EDS-2 |
POSITION, LINEAR SENSOR-INDUCTIVE, 220mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 260mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 370mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 250mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 300mm, 4-20mA, CYLINDRICAL
POSITION, LINEAR SENSOR-INDUCTIVE, 100mm, 4-20mA, CYLINDRICAL
|
Micro-Epsilon Group
|
| SPI08N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
Infineon
|
| SB002-15CP |
150V/ 20mA Rectifier
150V, 20mA Rectifier
Small signal(single type)
|
SANYO[Sanyo Semicon Device]
Sanyo Semiconductor
|
| 2SC3459 0330 |
NPN Triple Diffused Planar Silicon Transistor 800V/4.5A Switching Regulator Applications
From old datasheet system
|
Sanyo
|
| 2SC2059KM 2SC2059KN 2SC2059KP 2SC4099P 2SC4099M 2S |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SC-70 晶体管|晶体管|叩| 20V的五（巴西）总裁| 20mA的一（c）|的SC - 70
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SOT-323
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 20MA I(C) | SC-59
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR|BJT|NPN|20VV(BR)CEO|20MAI(C)|SC-59
|
Vishay Intertechnology, Inc.
|
| MPF111 MPF112 MPF110 TP3329 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 20MA I(DSS) | TO-92
TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 20MA I(DSS) | TO-92
TRANSISTOR | JFET | N-CHANNEL | 20MA I(DSS) | TO-92
TRANSISTOR | JFET | P-CHANNEL | 3MA I(DSS) | TO-92 晶体管|场效应| P通道| 3mA的我（直）|92
|
Electronic Theatre Controls, Inc.
|
| FQP8N80C FQPF8N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF3N80C FQP3N80C |
800V N-Channel Advance Q-FET C-Series
800V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| E28 E116 E113 E30 E106 E103 E105 E112 E209 E3 E100 |
Yellow, mini LED. Lens translucent. Luminous intensity at 10mA: 2.0mcd(min), 3.5mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
Orange InGaAIP, T-1 3/4, ultra bright LED. Lens orange translucent. Luminous intensity at 20mA: 700mcd(min), 3000mcd(max). Forward voltage at 20mA: 1.8V(typ), 2.3V(max).
Super bright green, mini LED. Lens translucent. Luminous intensity at 10mA: 10.0mcd(min), 16.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Green T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Red T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 12.5mcd(typ), 32.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
T-1 bright white LED / Lens clear
Miniature LEDs 微型发光二极
Orange, mini LED. Lens translucent. Luminous intensity at 10mA: 3.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.6V(max).
Yellow T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
High efficiency red, mini LED. Lens translucent. Luminous intensity at 10mA: 4.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max)(max).
Ultra bright red, mini LED. Lens translucent. Luminous intensity at 10mA: 20.0mcd(min), 60.0mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.5V(max)(max).
Yellow InGaAIP, T-1 3/4, ultra bright LED. Lens yellow translucent. Luminous intensity at 20mA: 400mcd(min), 1600mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
|
Gilway Technical Lamp
International Light Technologies Inc.
International Light Technologies, Inc.
|
|
