| PART |
Description |
Maker |
| NE6500379A-T1 NE6500379A |
3W, L/S-BAND MEDIUM POWER GaAs MESFET
|
Duracell
California Eastern Labs
|
| FLL300IL-1 FLL300IL-2 FLL300IL-3 |
L-Band Medium & High Power GaAs FET
|
Eudyna Devices Inc
|
| FLL600IQ-3 |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLU10XM |
L-Band Medium & High Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLL200IB-1 FLL200IB-3 |
(FLL200IB-1/-2/-3) L-Band Medium & High Power GaAs FET
|
Eudyna Devices
|
| NE9000XX NE9002XX |
(NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
|
NEC Electronics
|
| NE500199 NE500100 |
(NE500100 / NE500199) C-Band Medium Power GaAs MESFET
|
NEC Electronics
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| XP1019-BD08 XP1019-BD-000W |
17.0-24.0 GHz GaAs MMIC
17000 MHz - 24000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MIMIX BROADBAND INC
|
| NE985100 NE985200 NE985400 |
100 mA, 2 W, K-band power GaAs MESFET
200 mA, 2 W, K-band power GaAs MESFET
400 mA, 2 W, K-band power GaAs MESFET
|
NEC
|
| XP1013-BD-EV1 XP1013-BD-000V XP1013-BD |
17000 MHz - 26000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
17.0-26.0 GHz GaAs MMIC Power Amplifier
|
MIMIX BROADBAND INC
|
