| PART |
Description |
Maker |
| FMM7G30US60N |
Compact & Complex Module
Compact & Complex Module
|
FAIRCHILD[Fairchild Semiconductor]
|
| FMS6G20US60 |
Compact & Complex Module
|
Fairchild Semiconductor Corporation
|
| FMC6G15US60 |
Compact & Complex Module
|
Fairchild Semiconductor Corporation
|
| FMS7G15US60S |
Compact & Complex Module
|
Fairchild Semiconductor
|
| FMM7G20US60SI |
Compact & Complex Module
|
Fairchild Semiconductor
|
| FMC6G50US60 |
IGBT
Compact & Complex Module
Signal Generator; Signal Generator Type:ARB/Frequency/Signal; Bandwidth Max:21.5MHz; Modulation Type:Amplitude/Frequency; Sweep Rate Range:0 Hz to 21.5 MHz lin/log; Sweep Time Range:1 mSec to 60 Sec; Accuracy:0.001% Frequency
|
Fairchild Semiconductor Corporation
|
| RTP21005-11 |
This HPA Module is a high gain and compact amplifier module for WCDMA and LTE Repeater use.
|
RFHIC
|
| 7MBR25NE120 |
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,25A I(C)
From old datasheet system
|
Fuji Semiconductors, Inc.
|
| MUBW6-06A6 |
TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 600V V(BR)CES | 7A I(C) 晶体管| IGBT功率模块|络合物桥| 600V的五（巴西）国际消费电子展|7A我（丙）
|
Cooper Bussmann, Inc.
|
| MIG20J806HA |
TRANSISTOR | IGBT POWER MODULE | COMPLEX BRIDGE | 600V V(BR)CES | 25A I(C) 晶体管| IGBT功率模块|络合物桥| 600V的五（巴西）国际消费电子展|5A一（c
|
Toshiba, Corp.
|
| STAR450F5 |
compact violet laser diode module
|
Roithner LaserTechnik G...
|
