| PART |
Description |
Maker |
| BUZ37 |
main ratings
|
Siemens
|
| C67078-A1607-A2 BUZ58 |
main ratings
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| C67078-A1604-A2 BUZ47 BUZ47A |
main ratings 主要评级
|
SIEMENS[Siemens Semiconductor Group]
|
| C-67079-A1601-A2 BUZ67 |
main ratings 主要评级
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| BUZ88 C67078-A1609-A2 |
CONNECTOR ACCESSORY
main ratings
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BUZ88A C67078-A1609-A3 |
CONNECTOR ACCESSORY
main ratings
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BUZ35 C67078-A1014-A2 |
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3124; No. of Contacts:15; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle RoHS Compliant: No
MAIN RATINGS
|
SIEMENS AG
Siemens Semiconductor Group
|
| GBL410 GBL408 GBL4005 GBL401 GBL402 GBL404 GBL406 |
Maximum Ratings & Thermal Characteristics Ratings at 25??ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics Ratings at 25 ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics Ratings at 25∩ ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics Ratings at 25ambient temperature unless otherwise specified.
|
LRC[Leshan Radio Company]
乐山无线电股份有限公
|
| D4SB80 D4SB10 D4SB100 D4SB20 D4SB40 D4SB60 |
Maximum Ratings & Thermal Characteristics Ratings at 25?/a> ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics Ratings at 25 ambient temperature unless otherwise specified.
Maximum Ratings & Thermal Characteristics Ratings at 25∩ ambient temperature unless otherwise specified.
|
LRC[Leshan Radio Company]
|
| IDT54FCT162374ATPFB IDT54FCT162374TPAB IDT54FCT162 |
FAST CMOS 16-BIT REGISTER (3-STATE)
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.40 to 3.05; Characteristics rs (ohm) max: 1.8; Characteristics C (pF) max: C1 = 2.60 to 2.90 C3 = 0.97 to 1.08; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.35 to 2.55; Characteristics rs (ohm) max: 0.6; Characteristics C (pF) max: C1=6.62 to 7.02 C4=2.60 to 2.95; Characteristics CVR/CVR: 1/4; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.10 to 2.40; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.38 to 7.92 C2.5 = 3.26 to3.58; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 1.680 to 1.750; Characteristics rs (ohm) max: 1.2; Characteristics C (pF) max: C1 = 21.50 to 24.00 C2 = 12.50 to 14.50; Characteristics CVR/CVR: 1/2; Cl: 17; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 2.43 to 2.57; Characteristics rs (ohm) max: 0.75; Characteristics C (pF) max: C0.5 = 7.30 to 7.70 C2.5 = 2.90 to 3.18; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.30 to 2.46; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 7.3 to 8.6; Characteristics CVR/CVR: 0.5/2.5; Cl: 7.95; Package: SFP
Variable Capacitance Diode for Digital audio; Ratings VR (V): 10; Characteristics n: 2.28 to 2.90; Characteristics rs (ohm) max: 1.1; Characteristics C (pF) max: C1 = 2.90 to 3.30 C3 = 1.12 to 1.30; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.02 to 2.26; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C0.5 = 18.5 to 20.0 C2.5 = 8.55 to 9.45; Characteristics CVR/CVR: 0.5/2.5; Cl: -; Package: MP6
Variable Capacitance Diode for VCO; Ratings VR (V): 10; Characteristics n: 2.62 min; Characteristics rs (ohm) max: 0.4; Characteristics C (pF) max: C1 = 14.6 to 15.8 C4 = 5.20 to 5.80; Characteristics CVR/CVR: 1/4; Cl: 5.85; Package: EFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 3.0 min; Characteristics rs (ohm) max: 2; Characteristics C (pF) max: C1 = 41.6 to 49.9 C4 = 10.1 to 14.8; Characteristics CVR/CVR: 1/4; Cl: 12.45; Package: SFP
Variable Capacitance Diode for VCO; Ratings VR (V): 15; Characteristics n: 1.73 to 2.10; Characteristics rs (ohm) max: 0.7; Characteristics C (pF) max: C1 = 2.35 to 2.70 C3 = 1.22 to 1.42; Characteristics CVR/CVR: 1/3; Cl: -; Package: MP6
|
Integrated Device Technology, Inc.
|
| IE-V850E-MC-A |
Main in-circuit emulator board for V850E/MA1
Main in-circuit emulator board for V850E/IA1
|
NEC
|
