PART |
Description |
Maker |
DCA01006 DCA010-TB-E |
Very High-Speed Switching Diode Silicon Epitaxial Planar Type (Anode Common) Very High-Speed Switching Diode
|
Sanyo Semicon Device
|
TSPF5400 |
High Speed IR Emitting Diode in 5 mm (T-13/4) Package High Speed IR Emitting Diode in ?5 mm (T-13/4) Package From old datasheet system High Speed IR Emitting Diode in ? 5 mm (T?1 3/4) Package High Speed IR Emitting Diode in 酶 5 mm (T-13/4) Package High Speed IR Emitting Diode in ?5 mm (T-13/4) Package
|
Vishay Telefunken VISAY[Vishay Siliconix]
|
1SS397 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
1SS370 E000291 |
From old datasheet system DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS) DIODE (HIGH VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
TSFF5400 |
High Speed IR Emitting Diode in ? mm (T-13/4) Package From old datasheet system High Speed IR Emitting Diode in ? 5 mm (T?1 3/4)Package
|
Vishay Siliconix
|
RD2003JN |
Diffused Junction Silicon Diode Low VF - High-Speed Switching Diode
|
Sanyo Semicon Device
|
BAS40-07W BAS4007W |
Silicon Schottky Diode Preliminary data (General-purpose diode for high-speed switching Circuit protection Voltage clamping) 2 ELEMENT, SILICON, SIGNAL DIODE From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
1FI250B-060 |
Fast recovery diode module for high speed rectifier, free-wheeling diode, arc-welder applications
|
COLLMER SEMICONDUCTOR INC FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD.
|
1N914 |
High-speed diode SMALL SIGNAL DIODE
|
Philips General Semiconductor
|
BAS16W-TP |
DIODE SWITCH 75V 200MA SOD123 0.1 A, 75 V, SILICON, SIGNAL DIODE High Speed Switching Diode 350mW
|
Micro Commercial Components, Corp. Micro Commercial Compon...
|
1SS311 |
Diode Silicon Epitaxial Planar Type High Voltage,High Speed Switching Applications
|
TOSHIBA
|
1SS399 |
DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|