PART |
Description |
Maker |
AMFW-7S-122128-100P2 AMFW-7S-117128-65B AMFW-5S-12 |
8000 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 3700 MHz - 4200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 9600 MHz - 9800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 11700 MHz - 12750 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER 7200 MHz - 7800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER 11400 MHz - 12200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
INA-12063 INA-12063-TR1 INA-12063-BLK |
1500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER 1.5 GHz的低噪声自偏置晶体管放大 1.5 GHz Low Noise Self-Biased Transistor Amplifier
|
http://
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2SC4095 |
MICROWAVE LOW NOISE AMPLIFIER
|
California Eastern Labs
|
MAX2611 |
DC-to-Microwave, Low-Noise Amplifier
|
Maxim
|
2SC3583 2SC3583R 2SC3583S 2SC3583R35 2SC3583R34 2S |
For amplify microwave and low noise. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体 BJT 双极型晶体管
|
NEC Corp. NEC, Corp.
|
MMBTSC3356 |
for microwave low noise amplifier at VHF, UHF and CATV band
|
TY Semiconductor Co., Ltd
|
2SC4187 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD
|
NEC
|
UPA807 UPA807T UPA807T-T1 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
|
NEC[NEC]
|
2SC3585 2SC3585-T1B 2SC3585R43 2SC3585R45 2SC3585R |
For amplify microwave and low noise. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 10V的五(巴西)总裁| 35MA一(c)|的SOT - 346 TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346 晶体管|晶体管|叩| 10V的五(巴西)总裁| 35MA一(c)|的SOT - 346
|
NEC[NEC] NEC Corp. NEC, Corp.
|
AGB3300 AGB3300_REV_2.1 AGB3300S24Q1 |
50OHM HIGH LINEARITY LOW NOISE WIDEBAND GAIN BLOCK 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER From old datasheet system Gain Block Amplifiers The AGB3300 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and ...
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ANADIGICS, Inc. ANADIGICS[ANADIGICS, Inc] Anadigics Inc
|