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MSM5718B70 - 18-Megabit RDRAM (2M x 9)

MSM5718B70_1149906.PDF Datasheet


 Full text search : 18-Megabit RDRAM (2M x 9)


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K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
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Samsung Electronic
SAMSUNG[Samsung semiconductor]
AT52BR1674T-85CI AT52BR1672 AT52BR1672-85CI AT52BR From old datasheet system
16-megabit Flash and 2-megabit/ 4-megabit SRAM Stack Memory
ATMEL[ATMEL Corporation]
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SAMSUNG[Samsung semiconductor]
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Samsung Electronic
AM75DL9608HGT70IT AM75DL9608HGT75IS AM75DL9608HGT7 64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 64兆位个M x 16位)2兆位米16位).0伏的CMOS只,同时作业闪存,和
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SAMSUNG [Samsung semiconductor]
SAMSUNG[Samsung semiconductor]
KM416RD8AS-SCM80 KM416RD8AS KM416RD8AS-RBM80 128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
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AM50DL9608GT75IS AM50DL9608GT70IS AM50DL9608GT70IT 64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit SPECIALTY MEMORY CIRCUIT, PBGA73
Spansion Inc.
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SPANSION[SPANSION]
AT28C010 AT28C010-12 AT28C010-12DM_883 AT28C010-15 1 Megabit 128K x 8 Paged CMOS E2PROM
1 Megabit (128K x 8)
From old datasheet system
ATMEL[ATMEL Corporation]
 
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