| PART |
Description |
Maker |
| FLM1414-8F |
Internally Matched Power GaAs FET
|
Eudyna Devices Inc
|
| FLM1415-3F |
Internally Matched Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLM1415-6F |
Internally Matched Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLM5964-12DA |
Internally Matched Power GaAs FETs
|
Fujitsu
|
| MGFK37V4045 MGFK37V404511 |
X/Ku band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC36V3436 MGFC36V343611 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| FLM1414-4F |
Internally Matched Power GaAs FET 内部匹配砷化镓场效应
|
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
Sumitomo Electric Industries, Ltd.
|
| MGFC38V5964 MGFC38V596411 |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC39V7785A |
C band internally matched power GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFC38V5694 C385964 MGFC38V5964 |
5.9 - 6.4GHz BAND 6W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~ 6.4GHZ BAND 6W INTERNALLY MATCHED GAAS FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC42V5258 |
5.2-5.8 GHz Band 16W Internally Matched GaAs FET
5.2 - 5.8GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
