| PART |
Description |
Maker |
| 1SS378 |
DIODE (HGIH SPEED SWITCHING)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 2SK2604 |
N CHANNEL MOS TYPE (HGIH SPEED/ HIGH VOLTAGE SWITCHIN/ SWITCHING REGULATOR APPLICATIONS)
N CHANNEL MOS TYPE (HGIH SPEED, HIGH VOLTAGE SWITCHIN, SWITCHING REGULATOR APPLICATIONS)
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| RM20C1A-XXF RM20DA/CA/C1A-XXF RM20CA-XXF RM20DA-XX |
FAST RECOVERY DIODE MODULES HIGH SPEED SWITCHING USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
|
Mitsubishi Electric Corporation
|
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| BAW101-7 BAW101-15 |
Fast Switching Speed
DUAL SURFACE MOUNT SWITCHING DIODE
|
Diodes Incorporated
|
| BAV99W BAV99S BAV99B5003 |
Silicon Switching Diode
For high-speed switching applications
|
Infineon Technologies AG
|
| BAV99W Q62702-A1051 |
From old datasheet system
Silicon Switching Diode Array (Connected in series For high speed switching applications)
|
Siemens Semiconductor Group
Infineon
|
| RD0106T-H RD0106T-TL-H RD0106T12 |
Diffused Junction Silicon Diode Low VF . High-Speed Switching Diode
|
Sanyo Semicon Device
|
| RD0506LS-SB5 |
Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode
|
Sanyo Semicon Device
|
| RD2004LS |
Diffused Junction Silicon Diode Ultrahigh-Speed Switching Diode
|
Sanyo Semicon Device
|
