PART |
Description |
Maker |
COM20020I0609 COM20020I3VLJP COM20020I COM20020I3V |
5Mbps ARCNET (ANSI 878.1) Controller with 2K x 8 On-Chip RAM
|
SMSC[SMSC Corporation]
|
COM20051ILJP COM20051I |
Integrated Microcontroller and ARCNET (ANSI 878.1) Interface
|
SMSC[SMSC Corporation]
|
COM200221 |
10 Mbps ARCNET (ANSI 878.1) Controller with 2Kx8 On-Chip RAM
|
http://
|
COM20019I07 |
Cost Competitive ARCNET (ANSI 878.1) Controller with 2K x 8 On-Chip RAM
|
SMSC Corporation
|
COM20022I-3.3V COM20022I3V-HT COM20022I3V-HD |
10 Mbps ARCNET (ANSI 878.1) Controller with 2Kx8 On-Chip RAM
|
SMSC[SMSC Corporation]
|
IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)) N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET(减振钢板基本:100V的,身份证(续)4A条的Rds(on):0.070Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00V的,身份证(续)4A条的Rds(on.070Ω))
|
SEMELAB LTD Electronic Theatre Controls, Inc. TE Connectivity, Ltd. Semelab(Magnatec) SEME-LAB[Seme LAB]
|
ML2724DH-T ML272405 |
2.4GHz Low-IF 1.5Mbps FSK Transceiver
|
Micro Linear Corporation
|
IRFM250 |
N-Channel Power MOSFET(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):27.4A,Rds(on):0.100Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)7.4A,的Rds(on):0.100Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)7.4A时,RDS(对):0.100Ω))
|
Electronic Theatre Controls, Inc. SEME-LAB Seme LAB
|
IRFN340SMD |
N-Channel Power MOSFET(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω)(N沟道功率MOS场效应管(BVdss:400V,Id(cont):10A,Rds(on):0.55Ω))
|
SemeLAB SEME-LAB[Seme LAB]
|
COM20019I3.3V |
ARCNET-CircLink Controllers
|
Microchip
|