PART |
Description |
Maker |
TDA4817 TDA4817G Q67000-A8299 Q67000-A8298 |
PFC IC for High Power Factor and Acti... From old datasheet system Power Factor Controller IC for High Power Factor and Active Harmonic Filtering 0.5 A POWER FACTOR CONTROLLER, PDIP8 Power Factor Controller IC for High Power Factor and Active Harmonic Filtering 功率因数控制器IC,用于高功率因数,有源谐波滤
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
AWT6106 |
The AWT6106 is a 3.5V (3.0V to 4.2V) high power, high efficiency, three stage power amplifier module for Dual Mode CDMA/PCS wireless ...
|
Anadigics Inc
|
MJW16206 ON2059 |
POWER TRANSISTORS 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE High and Very High Resolution CRT Monitors From old datasheet system
|
ON Semiconductor
|
TDA4814 Q67000-A8163 TDA4814A |
PFC IC for High Power Factor and Acti... From old datasheet system Power Factor Controller IC for High Power Factor and Active Harmonic Filter
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
BUX45 |
HIGH VOLTAGE HIGH POWER SILICON NPN POWER SWITCHING TRANSISTORS
|
General Electric Solid State ETC[ETC] List of Unclassifed Manufacturers
|
IPS401-05I-SO IPS401-05C-D IPS401-05C-SO IPS401-05 |
High Efficiency, High Power Factor, Universal High Brightness WHITE LED Controller
|
List of Unclassifed Manufacturers
|
MJE18002D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 1000 VOLTS 50 WATTS
|
ON Semiconductor
|
FD1000FH-56 |
1000 A, 2800 V, SILICON, RECTIFIER DIODE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
Mitsubishi Electric Semiconductor
|
AWT6114 |
The AWT6114 is a high power, high efficiency amplifier module for Korean Band PCS CDMA wireless handset applications. Power Amplifiers KPCS CDMA 3.4V/28dBm Linear Power Amplifier Module
|
Anadigics Inc ANADIGICS, Inc
|
08-130097-B 08-130097 |
Compant High-Insulation Power Relay, Polarized, 10A 外形图式PFC MEGAPAC大功率(2.4KW OUTLINE DRAWING PFC MEGAPAC HIGH POWER (2.4KW)
|
Vicor, Corp. VICOR[Vicor Corporation]
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|