| PART |
Description |
Maker |
| AEH40F48 AEH40F48N AEH40K48 AEH40K48N |
AEH40Series
132 Watts / 48 Watts DC-DC Converter
DC-DC / Industry Standard Isolated Half Brick
|
Emerson Network Power
Astec America, Inc
|
| 2729-170 |
170 Watts, 38 Volts, 100us, 10% 170 Watts, 38 Volts, 100?, 10%
170 Watts, 38 Volts, 100us, 10% 170 Watts, 38 Volts, 100刁, 10%
|
ADPOW[Advanced Power Technology]
|
| PTF10009 |
85 Watts, 1.0 GHz GOLDMOS?/a> Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor
85 Watts, 1.0 GHz GOLDMOSField Effect Transistor
85 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTB20078 |
2.5 Watts, 1525660 MHz INMARSAT RF Power Transistor
2.5 Watts, 1525-1660 MHz INMARSAT RF Power Transistor 2.5瓦，16250年国际海事卫星组织兆赫射频功率晶体管
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| K100N50X4 |
Half Flange Termination 100 Watts, 50楼?
Half Flange Termination 100 Watts, 50Ω
|
Anaren Microwave
|
| C100N50Z4 |
Surface Mount Termination 100 Watts, 50楼?
Surface Mount Termination 100 Watts, 50Ω
|
Anaren Microwave
|
| PTB20176 |
5 Watts, 1.78-1.92 GHz RF Power Transistor 5瓦，1.78-1.92 GHz射频功率晶体
5 Watts, 1.78?.92 GHz RF Power Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF10031 |
50 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 50瓦，1.0 GHzGOLDMOS场效应晶体管
|
Ericsson Microelectronics
|
| PTB20006 |
4 Watts, 86000 MHz Cellular Radio RF Power Transistor
4 Watts, 860-900 MHz Cellular Radio RF Power Transistor
4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10015 |
50 Watts/ 300-960 MHz GOLDMOS Field Effect Transistor
50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor
50 Watts, 30060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
