PART |
Description |
Maker |
GRM21BR72A103KA01B ATC600F220JT250XT ATC600F300JT2 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc Freescale Semiconductor, In... Freescale Semiconductor...
|
AFT21H350W03SR6 |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
AFV09P350-04GNR3 AFV09P350-04N AFV09P350-04NR3 |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
RF--35 CRCW120610KOJNEA CRCW120610ROJNEA ATC100B0R |
RF Power LDMOS Transistors Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
LET9002 |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
LET9060S |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMICROELECTRONICS[STMicroelectronics]
|
LET20030S |
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
|
STMICROELECTRONICS[STMicroelectronics]
|
LET9045S 9334 |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY IN PLASTIC PACKAGE From old datasheet system
|
http:// STMICROELECTRONICS[STMicroelectronics]
|
PTFB183404E PTFB183404F |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ?1880 MHz
|
Infineon Technologies AG
|
BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF6G22-45 |
Power LDMOS transistor Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|