| PART |
Description |
Maker |
| MTD6N15 MTD6N15T4G |
Power Field Effect Transistor DPAK for Surface Mount(功率场效应晶体管) 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Power MOSFET 150 V, 6 A, N-Channel DPAK; Package: DPAK 4 LEAD Single Gauge Surface Mount; No of Pins: 4; Container: Tape and Reel; Qty per Container: 2500 6 A, 150 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| RFP-250375-4X50-2 |
Chip Terminations 150 Watts, 50ohm
|
Anaren Microwave
|
| ISD4002-120 ISD4002-120E ISD4002-120ED ISD4002 ISD |
Single-Chip Voice Record/Playback Devices 120-, 150-, 180-, and 240-Second Durations
Single-Chip Voice Record/Playback Devices 120- 150- 180- and 240-Second Durations
|
N.A.
ETC[ETC]
|
| MJH11017 MJH11020 MJH11019 MJH11021 MJH11022 MJH11 |
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150 / 200 / 250 VOLTS 150 WATTS
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150, 200, 250 VOLTS 150 WATTS
15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS 150 200 250 VOLTS 150 WATTS
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| T6300415 T6300420 T6200915 T6200920 T6200930 T6300 |
TV 42C 36#22D 6#8(TWINAX) SKT 第一阶段控制晶闸管（150-300安培100-1600伏特
Phase Control SCR (150-300 Amperes 100-1600 Volts) 第一阶段控制晶闸管（150-300安培100-1600伏特
|
Micropac Industries, Inc.
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| RF1K4922396 RF1K49223 |
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET?/a> Power MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET Power MOSFET
2.5A, -30V, 0.150 Ohm, Dual P-Channel LittleFET PowerMOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFET⑩ Power MOSFET
2.5A, 30V, 0.150 Ohm, Dual P-Channel LittleFETPower MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| P160-223GS P160-154GS P160-273GS P160-183GS P160-1 |
1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 150 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 1.8 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 100 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 2.7 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 180 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 2.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 1.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 1.5 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
1 ELEMENT, 0.33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD CHIP
Power Micro i? Chip Inductors
|
API Delevan
|
| STF23NM60ND STI23NM60ND STW23NM60ND STP23NM60ND ST |
N-channel 600 V - 0.150 ヘ - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh⑩ II Power MOSFET
N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh?/a> II Power MOSFET
N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh II Power MOSFET
N-channel 600 V - 0.150 楼? - 20 A - D2/I2PAK - TO-220/FP - TO-247 FDmesh垄芒 II Power MOSFET
|
http://
STMicroelectronics
|
| PTFA041501GL PTFA041501HL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz
UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Infineon Technologies AG
|
|
