PART |
Description |
Maker |
HYS64D3202 HYS64D16000GDL-6-C HYS64D32020HDL-6-C H |
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank; Available 2Q04 DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank; Available 2Q04 DDR SDRAM Modules - 256MB (32Mx64) PC2700 2-bank; Available 2Q04 200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
M368L3313DTL-CB0 M368L3313DTL-CB3 M368L3313DTL-CA2 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
Samsung semiconductor
|
WV3EG6434S262BD4 WV3EG6434S335BD4 WV3EG6434S265BD4 |
256MB - 32Mx64 DDR SDRAM UNBUFFERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
NT256D64S88A2GM NT256D64S88A2GM-7K NT256D64S88A2GM |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM 200pin One Bank Unbuffered DDR SO-DIMM 200pin一个银行缓冲的DDR SO - DIMM插槽
|
NANYA ETC Electronic Theatre Controls, Inc.
|
HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb 256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
WED3DG6435V75JD1 |
256MB - 32Mx64 SDRAM UNBUFFERED
|
White Electronic Design...
|
256MBDDRSDRAM K4H561638B K4H560838B K4H560438B |
256Mb DDR SDRAM DDRSDRAMSpecificationVersion0.3 DDR SDRAM Specification Version 0.3
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
NT256S64VH8A0GM-75B NT256S64VH8A0GM-7K NT256S64VH8 |
256Mb: 32Mx64 SDRAM module based on 16Mx16, 4Banks, 8K refresh, 3.3V synchronous DRAM with SPD
|
NANYA
|
EM6A9320 EM6A9320BI-28 EM6A9320BI-30 EM6A9320BI-33 |
285MHz 2.8V 4M x 32 DDR SDRAM 300MHz 2.8V 4M x 32 DDR SDRAM 333MHz 2.8V 4M x 32 DDR SDRAM 350MHz 2.8V 4M x 32 DDR SDRAM 4M x 32 DDR SDRAM 4米32 DDR SDRAM内存
|
ETRON[Etron Technology, Inc.] Etron Technology Inc. ETRON[Etron Technology Inc.]
|
HYMD232726CL8-H HYMD232726CL8-K HYMD232726CL8-L HY |
DDR SDRAM - Unbuffered DIMM 256MB 32M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 Unbuffered DDR SDRAM DIMM
|
HYNIX SEMICONDUCTOR INC
|