| PART |
Description |
Maker |
| CFY77 CFY77-08 CFY77-10 Q62702-F1559 Q62702-F1549 |
From old datasheet system
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MGF4953B11 |
Low Noise GaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| MGF4963BL |
Low Noise GaAs HEMT
|
Mitsubishi Electric Semiconductor
|
| HMC-ALH140 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER
|
Analog Devices
|
| HMC-ALH216 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER
|
Analog Devices
|
| HMC-ALH509 |
GaAs HEMT LOW NOISE AMPLIFIER, 71 - 86 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH364 HMC-ALH36409 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 32 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH24409 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz
|
Hittite Microwave Corporation
Hittite Microwave Corpo...
|
| HMC-ALH476 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 14 - 27 GHz
|
Hittite Microwave Corporation
|
| HMC-ALH14007 |
GaAs HEMT MMIC LOW NOISE AMPLIFIER, 24 - 40 GHz
|
Hittite Microwave Corporation
|
| Q62703-F108 Q62703-F106 CFY25 Q62703-F107 CFY25-17 |
From old datasheet system
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization)
|
SIEMENS[Siemens Semiconductor Group]
|
