| PART |
Description |
Maker |
| CWB4500 CWB4500CP CWB4500CY |
CMOS/DMOS Wideband High-Frequency Multiplexer
|
CALOGIC[Calogic, LLC]
Calogic LLC
|
| CWB308 CWB308CP CWB308CY CWB309 CWB309CP CWB309CY |
CMOS/DMOS Quad Monolithic SPST Wide Band Analog Switches
CMOS/DMOS Quad Monolithic SPST Wide Band Analog Switches QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO16
|
CALOGIC[Calogic, LLC]
Calogic LLC
|
| SD210DE-15 |
High-Speed Analog N-Channel DMOS FETs
|
Calogic, LLC
|
| VN2410 VN2406 |
N-Channel Enhancement-Mode Vertical DMOS FET(击穿电压240V,10Ω，N沟道增强型垂直DMOS结构场效应管) N沟道增强型场效应管垂直的DMOS（击穿电40伏，10Ω沟道增强型垂直的DMOS结构场效应管
N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,10惟锛?娌??澧?己????茨MOS缁???烘?搴??)
N-Channel Enhancement-Mode Vertical DMOS FET(?荤┛?靛?240V,6惟锛?娌??澧?己????茨MOS缁???烘?搴??)
|
Elan Microelectronics, Corp.
ELAN Microelctronics Corp .
|
| 2N2535N5 2N2535N3 2N2540N3 2N2540N5 2N2540N8 DN253 |
350V N-channel depletion - Mode vertical DMOS FET
400V N-channel depletion - Mode vertical DMOS FET
N-Channel Depletion-Mode Vertical DMOS FETs
|
Supertex Inc
|
| STN4426 |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4346 |
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST3401SRG |
ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| STP9437 |
STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP4403 |
STP4403 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST3400SRG |
The ST3400SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
