| PART |
Description |
Maker |
| 2SA1946 |
500mW SMD PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5212
FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| PBSS5350SS PBSS4350SPN PBSS4350SS PBSS5350SS115 |
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor; Package: SOT96-1 (SO8); Container: Tape reel smd 2700 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
Philips Semiconductors
NXP[NXP Semiconductors]
|
| PBSS3540M PBSS3540M315 |
40 V, 0.5 A PNP low VCEsat (BISS) transistor; Package: SOT883 (SC-101); Container: Tape reel smd 500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
40 V. 0.5 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
Philips
|
| PMEM4020PD PMEM4020PD115 |
PNP transistor/Schottky-diode module; Package: SOT457 (SC-74); Container: Tape reel smd 1300 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CPBT720 |
0.350W General Purpose PNP SMD Transistor. 40V Vceo, 1.500A Ic, 300 hFE.
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 1.5A I(C) | SOT-23
|
Continental Device India Limited
|
| PBSS5230T PBSS5220T PBSS5220T215 |
20V, 2A PNP low VCEsat (BISS) transistor
20 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| 1N4701-TAPE 1N4704C 1N4704A 1N4712D 1N4712C 1N4709 |
Diode Zener Single 14V 5% 500mW 2-Pin DO-35 Ammo
Diode Zener Single 17V 2% 500mW 2-Pin DO-35
Diode Zener Single 17V 5% 2-Pin DO-7
Diode Zener Single 28V 1% 500mW 2-Pin DO-35
Diode Zener Single 28V 2% 500mW 2-Pin DO-35
Diode Zener Single 24V 1% 500mW 2-Pin DO-35
Diode Zener Single 18V 1% 500mW 2-Pin DO-35
Diode Zener Single 15V 1% 500mW 2-Pin DO-35
Diode Zener Single 18V 2% 500mW 2-Pin DO-35
Diode Zener Single 22V 1% 500mW 2-Pin DO-35
Diode Zener Single 25V 1% 500mW 2-Pin DO-35
Diode Zener Single 13V 1% 500mW 2-Pin DO-35
Diode Zener Single 3V 1% 500mW 2-Pin DO-35
Diode Zener Single 39V 1% 500mW 2-Pin DO-35
Diode Zener Single 5.6V 1% 500mW 2-Pin DO-35
Diode Zener Single 8.2V 1% 500mW 2-Pin DO-35
|
New Jersey Semiconductor
|
| 2SC3438 |
500mW SMD NPN transistor, maximum rating: 100V Vceo, 500mA Ic, 55 to 300 hFE. Complementary 2SA1368
FOR HIGH VOLTAGE DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE
|
ISAHAYA[Isahaya Electronics Corporation]
|
| ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 3.5AI（丙）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 10A条一（c）|1
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 8A条一（c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 3A条一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五（巴西）总裁|5A一（c
|
Cypress Semiconductor, Corp.
Vicor, Corp.
Atmel, Corp.
Advanced Analogic Technologies, Inc.
EPCOS AG
|
| BCP69 BCP69-16 BCP69-16_DG BCP69-16_IN BCP69-25 BC |
PNP medium power transistor; 20 V, 1 A - Complement: BCP68 ; fT min: 40 MHz; hFE max: 375 ; hFE min: 85 ; I<sub>C</sub> max: 1000 mA; Polarity: PNP ; Ptot max: 1350 mW; VCEO max: 20 V; Package: SOT223 (SC-73); Container: Tape reel smd
20 V, 1 A PNP medium power transistor
|
NXP Semiconductors
|
| 2SC5210 |
500mW SMD NPN transistor, maximum rating: 250V Vceo, 100mA Ic, 55 to 230 hFE.
FOR SMALL TYPE COLOUR TV CHROMA OUTPUT APPLICATION SILICON NPN TRIPLE DIFFUSED TYPE
|
Isahaya Electronics Corporation
|
